Method of fabricating rare earth doped planar optical waveguide for integrated optical circuit

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	Method of fabricating rare earth doped planar optical waveguide for integrated optical circuit
其他题名	Method of fabricating rare earth doped planar optical waveguide for integrated optical circuit
	TUMMINELLI, RICHARD P.
	1992-08-25
专利权人	CHARLES STARK DRAPER LABORATORY, THE
公开日期	1992-08-25
授权国家	美国
专利类型	授权发明
摘要	A method of fabricating rare earth doped planar optical waveguides for integrated optical circuits includes introducing a first carrier gas to a heated column of rare earth chelate to create a flow of rare earth chelate vapor in the carrier; introducing a second carrier gas through a silicon precursor to create a flow of silicon precursor vapor in the carrier; submitting the flow of rare earth chelate vapor and the flow of silicon precursor vapor with oxygen and a homogenizing agent to a flame hydrolysis deposition burner to produce a soot of rare earth doped silica; and depositing the soot on a planar substrate; and etching the soot, after consolidation, to define one or more discrete channel waveguides.
其他摘要	制造用于集成光学电路的稀土掺杂平面光波导的方法包括将第一载气引入加热的稀土螯合柱中以在载体中产生稀土螯合物蒸气流;通过硅前体引入第二载气以在载体中产生硅前驱物蒸气流;将稀土螯合物蒸气流和硅前体蒸汽流与氧气和均化剂一起送入火焰水解沉积燃烧器，生成稀土掺杂二氧化硅烟灰;并将烟灰沉积在平面基板上;在固结之后蚀刻烟灰以限定一个或多个离散的通道波导。
主权项	A method of fabricating rare earth doped planar optical waveguides for integrated optical circuits comprising: introducing a first carrier gas through a heated column of rare earth chelate to create a flow including rare earth chelate vapor and the first carrier; introducing a second carrier gas through a silicon precursor to create a flow including silica precursor vapor and the second carrier; introducing a flow of gas including a precursor of a glass homogenizing agent to one of said flow including silicon precursor vapor and said flow including rare earth chelate vapor; submitting (1) the flow including the rare earth chelate vapor, (2) the flow including the silica precursor vapor and (3) oxygen gas to a flame hydrolysis deposition burner to produce a soot of rare earth doped silica; depositing said soot on a planar substrate; heating said soot deposited on said substrate to consolidate said soot; and etching said consolidate soot to define one or more discrete channel waveguides.
申请日期	1991-05-17
专利号	US5141549
专利状态	失效
申请号	US07/703150
公开（公告）号	US5141549
IPC 分类号	C03B37/014 \| C03C17/245 \| C03C17/23 \| C23C16/22 \| C23C16/453 \| C23C16/24 \| G02B6/13 \| G02B6/132 \| H01S5/026 \| H01S5/00 \| G02B6/12 \| H01S3/094 \| C03B5/18
专利代理人	-
代理机构	IANDIORIO & DINGMAN
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45846
专题	半导体激光器专利数据库
作者单位	CHARLES STARK DRAPER LABORATORY, THE
推荐引用方式 GB/T 7714	TUMMINELLI, RICHARD P.. Method of fabricating rare earth doped planar optical waveguide for integrated optical circuit. US5141549[P]. 1992-08-25.

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