Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser device with ridge structure | |
其他题名 | Semiconductor laser device with ridge structure |
CHINO, TOYOJI; KUMABUCHI, YASUHITO; KIDOGUCHI, ISAO; ADACHI, HIDETO | |
2001-07-24 | |
专利权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
公开日期 | 2001-07-24 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | A semiconductor laser device, including a substrate; a ridge stripe formed on the substrate and including an active layer, an n-cladding layer and p-cladding layer, the n-cladding layer and the p-cladding layer interposing the active layer; in which the ridge stripe has a laser unit which lases. In one embodiment the ridge stripe has a tip portion having a tapered shape, and an angle formed inside the ridge stripe by a bottom surface of the ridge stripe and a side surface of the ridge stripe is in the range of about 60° and about 90°. In one embodiment, the laser device includes a misoriented substrate and the ridge stripe has current blocking layers formed on both sides thereof. |
其他摘要 | 一种半导体激光装置,包括基板;在基板上形成脊形条纹,包括有源层,n包层和p包层,n包层和插入有源层的p包层;其中脊条具有激光单元,其激光发射。在一个实施例中,脊条具有尖端部分,该尖端部分具有锥形形状,并且脊条纹的底表面在脊条纹内部形成的角度和脊条纹的侧表面在约60°和约90°的范围内。 °。在一个实施例中,激光器件包括错误定向的基板,并且脊形条带具有形成在其两侧的电流阻挡层。 |
主权项 | A semiconductor laser device, comprising: a substrate; a ridge stripe formed on said substrate and including an active layer, an n-cladding layer and p-cladding layer, said n-cladding layer and said p-cladding layer interposing said active layer; wherein: said ridge stripe has a laser unit which lases and a tip portion having a tapered shape; and an angle formed inside said ridge stripe by a bottom surface of said ridge stripe and a side surface of said ridge stripe is in the range of about 60.degree. and about 90.degree.. |
申请日期 | 2000-07-27 |
专利号 | US6266354 |
专利状态 | 失效 |
申请号 | US09/626686 |
公开(公告)号 | US6266354 |
IPC 分类号 | H01L21/473 | H01L21/02 | H01L21/306 | H01S5/00 | H01S5/227 | H01S5/323 | H01S5/20 | H01S5/10 | H01S5/223 |
专利代理人 | - |
代理机构 | RENNER,OTTO,BOISSELLE & SKLAR,LLP |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/45839 |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
推荐引用方式 GB/T 7714 | CHINO, TOYOJI,KUMABUCHI, YASUHITO,KIDOGUCHI, ISAO,et al. Semiconductor laser device with ridge structure. US6266354[P]. 2001-07-24. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US6266354.PDF(1337KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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