Mode-locked semiconductor laser and method of driving the same

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	Mode-locked semiconductor laser and method of driving the same
其他题名	Mode-locked semiconductor laser and method of driving the same
	SHIMIZU, TAKANORI; YOKOYAMA, HIROYUKI; YAMAGUCHI, MASAYUKI
	2000-02-29
专利权人	NEC CORPORATION
公开日期	2000-02-29
授权国家	美国
专利类型	授权发明
摘要	There is provided a mode-locked semiconductor laser including a saturable absorber section, a gain section having the same composition as that of the saturable absorber section, a non-absorptive waveguide section having an absorption edge wavelength shorter than an oscillation wavelength of the gain section, an electroabsorption modulator section having an absorption edge wavelength intermediate between an oscillation wavelength of the gain section and an absorption edge wavelength of the non-absorptive waveguide section, and a distributed Bragg reflector section having the same composition as that of the non-absorptive waveguide section and including a diffraction grating. These five sections are optically coupled to one another in a single waveguide. The above-mentioned mode-locked semiconductor laser makes it possible to enhance an efficiency with which high frequency signals are applied thereto, with conditions for causing saturable absorption operation, such as a section length and a bias voltage, being kept in an optimal range.
其他摘要	提供一种锁模半导体激光器，包括可饱和吸收器部分，具有与可饱和吸收器部分相同组成的增益部分，非吸收波导部分，其吸收边缘波长短于增益部分的振荡波长电吸收调制器部分，其吸收边缘波长介于增益部分的振荡波长和非吸收波导部分的吸收边缘波长之间，和分布式布拉格反射器部分具有与非吸收波导相同的组成部分包括衍射光栅。这五个部分在单个波导中彼此光学耦合。上述锁模半导体激光器使得可以提高向其施加高频信号的效率，其中使得诸如截面长度和偏置电压的可饱和吸收操作的条件保持在最佳范围内。
主权项	A mode-locked semiconductor laser comprising: (a) a saturable absorber section; (b) a gain section having the same composition as that of said saturable absorber section; (c) a non-absorptive waveguide section having an absorption edge wavelength shorter than an oscillation wavelength of said gain section; (d) an electroabsorption modulator section having an absorption edge wavelength intermediate between an oscillation wavelength of said gain section and an absorption edge wavelength of said non-absorptive waveguide section; and (e) a distributed Bragg reflector section having the same composition as that of said non-absorptive waveguide section and including a diffraction grating, said sections (a) to (e) being optically coupled to one another in a single waveguide.
申请日期	1997-10-09
专利号	US6031851
专利状态	失效
申请号	US08/948046
公开（公告）号	US6031851
IPC 分类号	H01S3/098 \| H01S5/06 \| H01S5/0625 \| H01S5/00 \| H01S5/026 \| H01S5/042 \| H01S5/065 \| H01S3/10 \| H01S3/13 \| H01S3/19 \| H01S5/32
专利代理人	-
代理机构	YOUNG & THOMPSON
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45816
专题	半导体激光器专利数据库
作者单位	NEC CORPORATION
推荐引用方式 GB/T 7714	SHIMIZU, TAKANORI,YOKOYAMA, HIROYUKI,YAMAGUCHI, MASAYUKI. Mode-locked semiconductor laser and method of driving the same. US6031851[P]. 2000-02-29.