Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures

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	Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
其他题名	Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
	KONG, HUA-SHUANG; EDMOND, JOHN ADAM; HABERERN, KEVIN WARD; EMERSON, DAVID TODD
	2004-10-12
专利权人	CREE, INC.
公开日期	2004-10-12
授权国家	美国
专利类型	授权发明
摘要	A method of fabricating a gallium nitride-based semiconductor structure on a substrate includes the steps of forming a mask having at least one opening therein directly on the substrate, growing a buffer layer through the opening, and growing a layer of gallium nitride upwardly from the buffer layer and laterally across the mask. During growth of the gallium nitride from the mask, the vertical and horizontal growth rates of the gallium nitride layer are maintained at rates sufficient to prevent polycrystalline material nucleating on said mask from interrupting the lateral growth of the gallium nitride layer. In an alternative embodiment, the method includes forming at least one raised portion defining adjacent trenches in the substrate and forming a mask on the substrate, the mask having at least one opening over the upper surface of the raised portion. A buffer layer may be grown from the upper surface of the raised portion. The gallium nitride layer is then grown laterally by pendeoepitaxy over the trenches.
其他摘要	在衬底上制造氮化镓基半导体结构的方法包括以下步骤：在衬底上直接形成具有至少一个开口的掩模，通过该开口生长缓冲层，以及从该衬底生长一层氮化镓。缓冲层和横向穿过掩模。在从掩模生长氮化镓期间，氮化镓层的垂直和水平生长速率保持在足以防止在所述掩模上成核的多晶材料中断氮化镓层的横向生长的速率。在一个替代实施例中，该方法包括形成至少一个凸起部分，该凸起部分限定基板中的相邻沟槽并在基板上形成掩模，该掩模在凸起部分的上表面上具有至少一个开口。可以从凸起部分的上表面生长缓冲层。然后通过在沟槽上的pendeoepitaxy横向生长氮化镓层。
主权项	A semiconductor structure comprising: a substrate having an upper surface; a mask directly on said upper surface of said substrate, and having at least one window therein; and an overgrown epitaxial layer selected from the group consisting of gallium nitride and Group III nitride alloys of gallium nitride and extending upwardly from said mask window and laterally across said mask; wherein polycrystalline material has nucleated on said mask.
申请日期	2003-05-02
专利号	US6803602
专利状态	授权
申请号	US10/427984
公开（公告）号	US6803602
IPC 分类号	H01L21/02 \| H01L21/20 \| H01L21/205 \| H01S5/00 \| H01S5/02 \| H01L31/025 \| H01L31/0256
专利代理人	-
代理机构	SUMMA & ALLAN,P.A.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45807
专题	半导体激光器专利数据库
作者单位	CREE, INC.
推荐引用方式 GB/T 7714	KONG, HUA-SHUANG,EDMOND, JOHN ADAM,HABERERN, KEVIN WARD,et al. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures. US6803602[P]. 2004-10-12.

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