Semiconductor laser and method of producing the same

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	Semiconductor laser and method of producing the same
其他题名	Semiconductor laser and method of producing the same
	MURAYAMA, MINORU
	2004-01-27
专利权人	ROHM CO., LTD.
公开日期	2004-01-27
授权国家	美国
专利类型	授权发明
摘要	A semiconductor laser having a lower clad layer, an active layer, a first upper clad layer and a dry-etching stop layer, all the layers being successively laminated on a compound semiconductor substrate. The semiconductor laser further includes (i) a second upper clad layer, in the form of a ridge, formed above the first upper clad layer, (ii) an etching stop layer present only between the dry-etching stop layer and the second upper clad layer, and (iii) block layers formed at sides of the second upper clad layer.
其他摘要	一种半导体激光器，具有下包层，有源层，第一上包层和干蚀刻停止层，所有层依次层叠在化合物半导体衬底上。半导体激光器还包括（i）形成在第一上包层上方的脊形第二上包层，（ii）仅在干蚀刻停止层和第二上包层之间存在的蚀刻停止层（iii）阻挡层形成在第二上包层的侧面。
主权项	A semiconductor laser comprising: a lower clad layer laminated on a compound semiconductor substrate; an active layer laminated on said lower clad layer; a first upper clad layer laminated on said active layer; a dry-etching stop layer formed on said first upper clad layer; a second upper clad layer in a form of a ridge formed above said first upper clad layer; an etching stop layer present only between said dry-etching stop layer and said second upper clad layer; and block layers formed at sides of said second upper clad layer.
申请日期	2001-12-19
专利号	US6683899
专利状态	授权
申请号	US10/020908
公开（公告）号	US6683899
IPC 分类号	H01S5/00 \| H01S5/223 \| H01S5/20 \| H01L21/205 \| H01S5/227
专利代理人	-
代理机构	RABIN & BERDO,P.C.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45705
专题	半导体激光器专利数据库
作者单位	ROHM CO., LTD.
推荐引用方式 GB/T 7714	MURAYAMA, MINORU. Semiconductor laser and method of producing the same. US6683899[P]. 2004-01-27.

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