Semiconductor Laser

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	Semiconductor Laser
其他题名	Semiconductor Laser
	MATSUMOTO,KENJI C/O PATENT DIVISION, K.K. TOSHIBA; KURIHARA, HARUKI C/O PATENT DIVISION, K.K. TOSHIBA
	1993-03-17
专利权人	KABUSHIKI KAISHA TOSHIBA
公开日期	1993-03-17
授权国家	欧洲专利局
专利类型	授权发明
摘要	In a semiconductor laser, a substrate (15) is composed of a semiconductor basement (20) and a semiconductor current-blocking layer (21) on the basement. A straight channel (90) is grooved into the current-blocking-layer to reach the basement. The straight channel (90) has a constant width and is composed of a shallow window-region-channels (95A, 95B) in the vicinity of the cavity mirrors and a deep gain-region-channel (96) in the middle of the laser cavity. A first cladding layer (25) is grown on the substrate (15). A semiconductor active layer (26) is grown on the first cladding layer (25). A second cladding layer (27) is grown on the active layer (26). A semiconductor ohmic contact layer (28) is grown on the second cladding layer (27). A pair of electrodes (29, 30) is deposited on each of the upper and lower surfaces of the semiconductor laser device. A pair of cleaved facets (32A, 32B) is faced toward the direction perpendicular to the channel.
其他摘要	在半导体激光器中，衬底（15）由半导体基底（20）和基底上的半导体电流阻挡层（21）共同构成。将直通道（90）开槽到电流 - 阻挡层中以到达基底。直通道（90）具有恒定的宽度，并且由腔镜附近的浅窗区通道（95A，95B）和激光器中间的深增益区 - 通道（96）组成。腔。在衬底（15）上生长第一包层（25）。在第一包层（25）上生长半导体有源层（26）。在有源层（26）上生长第二包层（27）。在第二覆层（27）上生长半导体欧姆接触层（28）。一对电极（29,30）沉积在半导体激光器装置的上表面和下表面中的每一个上。一对切割面（32A，32B）面向垂直于通道的方向。
主权项	A semiconductor laser comprising: a substrate (15) which is composed of a semiconductor lower layer (20) of a first conductivity type and a semiconductor current-blocking-layer (21) of a second conductivity type on said lower layer; a straight channel (90) formed in said current-blocking-layer to reach said lower layer; a first cladding layer (25) of the first conductivity type grown on said substrate (15) by liquid-phase-epitaxy (LPE); a semiconductor active layer (26) of the first or second conductivity type on said first cladding layer (25) grown by the LPE; a second cladding layer (27) of the second conductivity type grown on said active layer (26); a semiconductor ohmic contact layer (28) of the second conductivity type grown on said second cladding layer; a pair of metal electrodes (29, 30), through which driving current flows in or out, deposited on each of the upper and lower surfaces of the semiconductor laser device; and a pair of cleaved facets (32A, 32B) perpendicular to said channel and defining the laser cavity; characterized in that the straight channel (90) has a constant width throughout the laser cavity and is composed of shallow window-region-channels (95A, 95B) in the vicinity of the cavity mirrors and a deep gain-region-channel (96) in the middle of the laser cavity.
申请日期	1988-05-17
专利号	EP0291936B1
专利状态	失效
申请号	EP1988107892
公开（公告）号	EP0291936B1
IPC 分类号	H01S5/00 \| H01S5/16 \| H01S5/223 \| H01S3/19
专利代理人	-
代理机构	HENKEL, FEILER, HÄNZEL & PARTNER
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45694
专题	半导体激光器专利数据库
作者单位	KABUSHIKI KAISHA TOSHIBA
推荐引用方式 GB/T 7714	MATSUMOTO,KENJI C/O PATENT DIVISION, K.K. TOSHIBA,KURIHARA, HARUKI C/O PATENT DIVISION, K.K. TOSHIBA. Semiconductor Laser. EP0291936B1[P]. 1993-03-17.