Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser

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	Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser
其他题名	Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser
	NITTA, JUN, C/O CANON KABUSHIKI KAISHA
	1999-01-20
专利权人	CANON KABUSHIKI KAISHA
公开日期	1999-01-20
授权国家	欧洲专利局
专利类型	授权发明
摘要	An oscillation polarization mode selective semiconductor laser for selectively performing one of oscillations in different polarization modes, is provided. The semiconductor laser includes a substrate, a laser structure formed on the substrate, and a phase shift region formed in the laser structure. The laser structure includes an active region in which population inversion is established by a current injection thereinto. At least a portion of the phase shift region has a strained quantum well structure in which degrees of a change in refractive index for internal light in different polarization modes due to a current injection thereinto are different from each other. The polarization mode of a light output from the laser can be changed by a small amount of current injected into the phase shift region, and fluctuation in the output intensity can be suppressed during a transition operation in polarization mode.
其他摘要	提供了一种用于选择性地执行不同偏振模式中的振荡之一的振荡偏振模式选择性半导体激光器。半导体激光器包括基板，形成在基板上的激光器结构，以及形成在激光器结构中的相移区。激光器结构包括有源区，其中通过其中的电流注入建立粒子数反转。至少一部分相移区域具有应变量子阱结构，其中由于其中的电流注入而导致的不同偏振模式中的内部光的折射率的变化程度彼此不同。通过注入相移区域的少量电流可以改变从激光器输出的光的偏振模式，并且可以在偏振模式的转换操作期间抑制输出强度的波动。
主权项	An oscillation polarization mode selective semiconductor laser for selectively performing one of oscillations in different polarization modes, comprising a first and a second polarization mode, said laser (201-1; 201-2; 403) comprising: a substrate (1; 101; 151); a laser structure formed on said substrate, said laser structure including an active region (31a, 31b; 104a, 104b; 154a, 154b) in which population inversion is established by a current injection thereinto; and a phase shift region (32; 111; 161, 162) formed in said laser structure, at least a portion of said phase shift region having a strained quantum well structure in which degrees of a change in refractive index for internally generated laser light in different polarization modes due to a current injection thereinto are different from each other said quantum well structure being such that the phase-matching wavelength for one the first and second polarization lasing modes hardly varies with increasing current injection in the phase shift region, so that the fluctuation of the intensity of the output laser light during the transition from said lasing mode to the other polarization lasing mode, when its threshold gain becomes lower than the one of the previous polarization lasing mode, is reduced , wherein said phase shift region is controllable by a current injection thereinto so as to switch between said first and second polarization modes and said current injection is independent from a current injection into the active region.
申请日期	1995-02-16
专利号	EP0668642B1
专利状态	失效
申请号	EP1995102175
公开（公告）号	EP0668642B1
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S5/06 \| H01S5/062 \| H01S5/0625 \| H01S5/065 \| H01S5/12 \| H01S5/34 \| H01S5/343 \| H01S3/103 \| H04B10/04
专利代理人	-
代理机构	TIEDTKE, HARRO, DIPL.-ING.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45671
专题	半导体激光器专利数据库
作者单位	CANON KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	NITTA, JUN, C/O CANON KABUSHIKI KAISHA. Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser. EP0668642B1[P]. 1999-01-20.