Epitaxial growth process for the production of a window semiconductor laser

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	Epitaxial growth process for the production of a window semiconductor laser
其他题名	Epitaxial growth process for the production of a window semiconductor laser
	MORIMOTO, TAIJI; MAEI, SHIGEKI; HAYASHI, HIROSHI; YAMAMOTO, SABURO
	1992-02-11
专利权人	SHARP KABUSHIKI KAISHA, 22-22, NAGAIKE-CHO, ABENO-KU, OSAKA 545 JAPAN
公开日期	1992-02-11
授权国家	美国
专利类型	授权发明
摘要	A window semiconductor laser device comprising a stripe-channeled substrate, an active layer for laser oscillation and a cladding layer disposed under the active layer, wherein the surface of the active layer is flat and the thickness of the portion of the active layer corresponding to the striped channel of said substrate in each of the window regions in the vicinity of the facets is thinner than that of the portion of the active corresponding to the striped channel of said substrate in the stimulated region positioned between the window regions.
其他摘要	一种窗口半导体激光器件，包括条形通道基板，用于激光振荡的有源层和设置在有源层下面的包层，其中有源层的表面是平坦的，并且有源层的部分的厚度对应于在小平面附近的每个窗口区域中的所述基板的条纹通道比位于窗口区域之间的受激区域中对应于所述基板的条纹通道的活动部分的条纹通道薄。
主权项	An epitaxial growth process the production of a semiconductor laser device comprising forming striped channels having a width of 10 microns and a depth of 1 micron facing each other at an interval of 40 microns in parallel on the growth surface of a substrate by etching and growing a crystal layer on the substrate by liquid phase epitaxy, and controlling the growth rate of that portion of the crystal layer which is positioned between or surrounded by said striped channels so that the portion of the crystal layer is substantially flat and a portion of the epitaxially growing layer between and surrounded by the striped channels is thinner than the portions of the epitaxially grown layer in the other areas than between the striped channels.
申请日期	1987-02-09
专利号	US5087587
专利状态	失效
申请号	US07/012249
公开（公告）号	US5087587
IPC 分类号	H01S5/00 \| H01S5/16 \| H01S5/223 \| H01S5/24 \| H01L21/20
专利代理人	-
代理机构	MORRISON & FOERSTER
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45666
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA, 22-22, NAGAIKE-CHO, ABENO-KU, OSAKA 545 JAPAN
推荐引用方式 GB/T 7714	MORIMOTO, TAIJI,MAEI, SHIGEKI,HAYASHI, HIROSHI,et al. Epitaxial growth process for the production of a window semiconductor laser. US5087587[P]. 1992-02-11.

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