Broadly tunable distributed bragg reflector structure processing

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	Broadly tunable distributed bragg reflector structure processing
其他题名	Broadly tunable distributed bragg reflector structure processing
	LO, YU-HWA
	2004-10-19
专利权人	GEMFIRE CORPORATION
公开日期	2004-10-19
授权国家	美国
专利类型	授权发明
摘要	A process for creating a broadly tunable Distributed Bragg Reflector (DBR) with a reduced recombination rate. According to the current invention, this may be achieved by creating electron confinement regions and hole confinement regions in the waveguide of the DBR. Preferably, this is achieved by engineering the band gaps of the DBR waveguide and cladding materials. Preferably, the materials selected for use in the DBR may be lattice matched. Alternately, two or more thin electron confinement regions and two or more thin hole confinement regions may be created to take advantage of strain compensation in thinner layers thereby broadening the choices of materials appropriate for use in creating a broadly tunable DBR. Alternately, graded materials and/or graded interfaces may be created according to alternate processes according to the current invention to provide effective electron and/or hole confinement regions in various DBR designs.
其他摘要	创建具有降低的重组率的可广泛调谐的分布式布拉格反射器（DBR）的过程。根据本发明，这可以通过在DBR的波导中产生电子限制区域和空穴限制区域来实现。优选地，这通过设计DBR波导和包层材料的带隙来实现。优选地，选择用于DBR的材料可以是晶格匹配的。或者，可以产生两个或更多个薄电子限制区域和两个或更多个细孔限制区域以利用更薄层中的应变补偿，从而扩大适合用于产生可广泛调谐的DBR的材料的选择。或者，可以根据本发明的替代工艺产生渐变材料和/或渐变界面，以在各种DBR设计中提供有效的电子和/或空穴限制区域。
主权项	A process for creating a broadly tunable Distributed Bragg Reflector (DBR) structure with a low spontaneous recombination rate at operating temperatures comprising the steps of: creating a first cladding layer of a first conductivity type; creating an optical waveguide disposed on top of said first cladding layer comprising the steps of creating one or more hole confinement regions and creating one or more electron confinement regions wherein energy barriers of greater than the thermal energy, kT, separate adjacent confinement regions; creating a second cladding layer of a second conductivity type disposed on top of said optical waveguide; a conduction band energy barrier greater than the thermal energy, kT, is created by establishing an effective conduction band offset between adjacent confinement regions; a valence band energy barrier greater than the thermal energy, kT, is created by establishing an effective valence band offset between adjacent confinement regions; the band gap of said first cladding layer and the band gap of said second cladding layer are greater than the effective band gaps of said hole confinement regions; the band gap of said first cladding layer and the band gap of said second cladding layer are greater than the effective band gaps of said electron confinement regions; a first cladding layer conduction band energy barrier greater than the thermal energy, kT, is created by establishing an effective conduction band offset between the conduction band of said first cladding layer and the conduction band of the adjacent confinement layer; a second cladding layer conduction band energy barrier greater than the thermal energy, kT, is created by establishing an effective conduction band offset between the conduction band of said second cladding layer and the conduction band of the adjacent confinement layer; a first cladding layer valence band energy barrier greater than the thermal energy, kT, is created by establishing an effective valence band offset between the valence band of said first cladding layer and the valence band of the adjacent confinement layer; and a second cladding layer valence band energy barrier greater than the thermal energy, kT, is created by establishing an effective valence band offset between the valence band of said second cladding layer and the valence band of the adjacent confinement layer.
申请日期	2001-11-07
专利号	US6806114
专利状态	失效
申请号	US10/039526
公开（公告）号	US6806114
IPC 分类号	H01L21/00 \| H01S5/00 \| H01S5/028 \| H01S5/042 \| H01S5/0625 \| H01S5/12 \| H01S5/183 \| H01S5/20 \| H01S5/22 \| H01S5/32 \| H01S5/34
专利代理人	-
代理机构	FERNANDEZ & ASSOCIATES LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45638
专题	半导体激光器专利数据库
作者单位	GEMFIRE CORPORATION
推荐引用方式 GB/T 7714	LO, YU-HWA. Broadly tunable distributed bragg reflector structure processing. US6806114[P]. 2004-10-19.

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