Semiconductor optical integrated element

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	Semiconductor optical integrated element
其他题名	Semiconductor optical integrated element
	ISHIMURA, EITARO; TAKAGI, KAZUHISA; MATSUMOTO, KEISUKE; SAITO, TAKESHI
	2013-09-03
专利权人	MITSUBISHI ELECTRIC CORPORATION
公开日期	2013-09-03
授权国家	美国
专利类型	授权发明
摘要	A semiconductor optical integrated element includes: a substrate; and a laser diode and a modulator which are integrated on the substrate. The laser diode includes an embedded waveguide having a core layer, both sides of which are embedded in a semiconductor material. The modulator includes a high-mesa ridge waveguide having a core layer, neither side of which is embedded in the semiconductor material. The core layers in the laser diode and the modulator are stripe-shaped.
其他摘要	一种半导体光学集成元件，包括：基板;以及集成在基板上的激光二极管和调制器。激光二极管包括具有芯层的嵌入式波导，芯层的两侧嵌入半导体材料中。调制器包括具有芯层的高台面脊形波导，芯层的两侧都不嵌入半导体材料中。激光二极管和调制器中的核心层是条形的。
主权项	A semiconductor optical integrated element comprising: a substrate having a surface;a laser diode integrated on the surface of the substrate and comprising a laser diode mesa having sides transverse to the surface of the semiconductor substrate, wherein the laser diode mesa includes cladding layers and a laser diode core layer having sides exposed at the sides of the laser diode mesa, the laser diode core layer is sandwiched between the cladding layers of the laser diode, and the cladding layers of the laser diode and the laser diode core layer are stacked on the semiconductor substrate in the laser diode mesa;a connection waveguide integrated on the surface of the substrate and comprising a connection waveguide mesa having sides transverse to the surface of the semiconductor substrate, wherein the connection waveguide mesa includes cladding layers and a connection waveguide core layer having sides exposed at the sides of the connection waveguide mesa, the connection waveguide core layer is sandwiched between the cladding layers of the connection waveguide, and the cladding layers of the connection waveguide and the connection waveguide core layer are stacked on the semiconductor substrate in the connection waveguide mesa;a modulator integrated on the surface of the substrate and comprising a modulator mesa having sides transverse to the surface of the semiconductor substrate, wherein the modulator mesa includes cladding layers and a modulator core layer having sides exposed at the sides of the modulator mesa, the modulator core layer is sandwiched between the cladding layers of the modulator, and the cladding layers of the modulator and the modulator core layer are stacked on the semiconductor substrate in the modulator mesa, the laser diode, the connection waveguide, and the modulator are optically serially connected and integrated so that light generated in the laser diode and output from the laser diode core layer is guided to the modulator core layer of the modulator through the core layer of the connection waveguide; at least one semiconductor material, having a larger bandgap energy than bandgap energies of the laser diode core layer and the connection waveguide core layer, covering and embedding the sides of the laser diode core layer and the sides of the connection waveguide core layer at the sides of the laser diode mesa and the connection waveguide mesa; and a passivation film covering and embedding the sides of the modulator core layer at the sides of the modulator mesa, wherein the laser diode core layer and of the modulator core layer are stripe-shaped.
申请日期	2011-02-03
专利号	US8526478
专利状态	授权
申请号	US13/020028
公开（公告）号	US8526478
IPC 分类号	H01S5/00
专利代理人	-
代理机构	LEYDIG, VOIT & MAYER, LTD.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45637
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORPORATION
推荐引用方式 GB/T 7714	ISHIMURA, EITARO,TAKAGI, KAZUHISA,MATSUMOTO, KEISUKE,et al. Semiconductor optical integrated element. US8526478[P]. 2013-09-03.

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