Nitride semiconductor laser chip

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	Nitride semiconductor laser chip
其他题名	Nitride semiconductor laser chip
	KAWAGUCHI, YOSHINOBU; KAMIKAWA, TAKESHI
	2013-10-29
专利权人	SHARP KABUSHIKI KAISHA
公开日期	2013-10-29
授权国家	美国
专利类型	授权发明
摘要	A nitride semiconductor laser chip is provided that offers sufficient reliability even at high output. The nitride semiconductor laser chip has a nitride semiconductor layer formed on a substrate, a resonator facet formed on the nitride semiconductor layer, and a coating film formed on the resonator facet and containing Ar. The coating film has, in a region contiguous with the resonator facet and in the vicinity thereof, a low-Ar region with a low Ar content and, on the side of this low-Ar region opposite from the resonator facet, a high-Ar region with a higher Ar content than the low-Ar region.
其他摘要	提供氮化物半导体激光器芯片，即使在高输出时也提供足够的可靠性。氮化物半导体激光器芯片具有形成在基板上的氮化物半导体层，形成在氮化物半导体层上的谐振器面，以及形成在谐振器面上并包含Ar的涂膜。在与谐振器面相邻的区域及其附近，涂膜具有Ar含量低的低Ar区域，并且在该低Ar区域的与谐振器端面相对的一侧具有高Ar值。 Ar含量高于低Ar区域的区域。
主权项	A nitride semiconductor laser chip comprising: a nitride semiconductor layer formed on a substrate; a resonator facet formed on the nitride semiconductor layer; anda coating film formed on the resonator facet and containing a rare gas element, the coating film including a first region and a second region, the first region being in contact with the resonator facet and disposed between the resonator facet and the second region, and a percentage by number of atoms of the rare gas element in the first region being lower than a percentage by number of atoms of the rare gas element in the second region.
申请日期	2010-05-24
专利号	US8571083
专利状态	授权
申请号	US12/785523
公开（公告）号	US8571083
IPC 分类号	H01S5/00
专利代理人	-
代理机构	HARNESS, DICKEY & PIERCE, P.L.C.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45608
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	KAWAGUCHI, YOSHINOBU,KAMIKAWA, TAKESHI. Nitride semiconductor laser chip. US8571083[P]. 2013-10-29.

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