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Single mode operation of microelectromechanically tunable, half-symmetric, vertical cavity surface emitting lasers
其他题名Single mode operation of microelectromechanically tunable, half-symmetric, vertical cavity surface emitting lasers
WANG, PEIDONG; TAYEBATI, PARVIZ; VAKHSHOORI, DARYOOSH
2004-06-01
专利权人NORTEL NETWORKS LIMITED
公开日期2004-06-01
授权国家美国
专利类型授权发明
摘要A method is provided for fabricating microelectromechanically tunable vertical-cavity surface-emitting lasers with precise lateral and vertical dimensional control. Microelectromechanical tunable vertical cavity surface emitting laser structures are also provided which include a suspended membrane structure made of a dielectric/metal membrane or metal film that supports a cavity-tuning reflective dielectric film stack while being anchored at the perimeter by metal support post(s). Tuning is achieved by translational movement of the cavity-tuning reflective dielectric film stack in a controlled electrostatic field. The current invention deals with the intracavity electrical contacts for current injection for this type of MEM-tunable VCSEL's. The current invention also includes various mechanisms to control the current injection profile so as to ensure single mode operation throughout the tuning range of the MEM-tunable VCSEL's.
其他摘要提供了一种用于制造具有精确横向和垂直尺寸控制的微机电可调谐垂直腔面发射激光器的方法。还提供了微机电可调谐垂直腔表面发射激光器结构,其包括由电介质/金属膜或金属膜制成的悬浮膜结构,其支撑腔调谐反射介电膜叠层,同时通过金属支撑柱锚定在周边。 。通过在受控静电场中腔调谐反射介电膜叠层的平移运动来实现调谐。本发明涉及用于这种类型的MEM可调谐VCSEL的电流注入的腔内电触点。本发明还包括控制电流注入分布的各种机制,以确保在MEM可调谐VCSEL的整个调谐范围内的单模操作。
主权项A microelectromechanically tunable vertical cavity surface emitting laser, said laser comprising: (a) a first electrode having a top surface; (b) a substrate having a top surface, said substrate being attached to said top surface of said electrode; (c) a first mirror having a top surface, said first mirror being attached to said top surface of said substrate; (d) a first layer of cladding having a top surface, said first layer of cladding being attached to said top surface of said first mirror; (e) a layer of gain material having a top surface and defining multiple quantum wells, said layer of gain material being attached to said top surface of said first layer of cladding; (f) a second layer of cladding having a top surface, said second layer of cladding being attached to said top surface of said layer of gain material; (g) current confinement means in the form of an isolation layer attached to said top surface of said second layer of cladding; (h) a contact layer, in the center of isolation layer, having a top surface, said contact layer being attached to said top surface of said second layer of cladding; (i) a second electrode, said second electrode being attached to said top surface of said contact layer; (j) a support structure having an upper surface and a lower surface, said support structure, comprising a peripheral portion that is fixed with respect to said second layer of cladding and said contact layer and a center portion that is spaced from said contact layer, said peripheral portion being able to flex to allow translational movement of said center portion relative to said contact layer, and said support structure defining the length and lateral dimensions of an air cavity located between said lower surface of said support structure and said upper surface of said contact layer; (k) a third electrode, said third electrode being attached to said support structure; and (l) a second mirror attached to said support structure such that said second mirror is translatable relative to said first mirror in response to an electric field applied between said second and third electrodes.
申请日期2002-09-26
专利号US6744805
专利状态失效
申请号US10/255401
公开(公告)号US6744805
IPC 分类号H01S5/00 | H01S5/183 | H01S5/02 | H01S5/14 | H01S5/10 | H01S3/08 | H01S3/10
专利代理人-
代理机构STEUBING MCGUINNESS & MANARAS LLP
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/45108
专题半导体激光器专利数据库
作者单位NORTEL NETWORKS LIMITED
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GB/T 7714
WANG, PEIDONG,TAYEBATI, PARVIZ,VAKHSHOORI, DARYOOSH. Single mode operation of microelectromechanically tunable, half-symmetric, vertical cavity surface emitting lasers. US6744805[P]. 2004-06-01.
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