System for adjusting the wavelength light output of a semiconductor device using hydrogenation

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	System for adjusting the wavelength light output of a semiconductor device using hydrogenation
其他题名	System for adjusting the wavelength light output of a semiconductor device using hydrogenation
	CHUA, CHRISTOPHER L.; KNEISSL, MICHAEL A.; JOHNSON, NOBLE M.; KIESEL, PETER
	2010-07-27
专利权人	PALO ALTO RESEARCH CENTER INCORPORATED
公开日期	2010-07-27
授权国家	美国
专利类型	授权发明
摘要	A method and structure for adjusting the wavelength output of a semiconductor device is described. In the method, the hydrogen concentration in an active region of the semiconductor device is adjusted either during fabrication or after the device has been fabricated. The adjustment provides a simple technique for fine tuning many device types including regular lasers and VCSEL structures. The adjustment also allows for mass production of lasers of many different frequencies on a single wafer substrate, a system particularly desirable for wavelength division multiplexing systems.
其他摘要	描述了用于调整半导体器件的波长输出的方法和结构。在该方法中，在制造期间或在制造器件之后调节半导体器件的有源区中的氢浓度。调整提供了一种简单的技术，用于微调许多器件类型，包括常规激光器和VCSEL结构。该调整还允许在单个晶片衬底上批量生产许多不同频率的激光器，这是波分多路复用系统特别需要的系统。
主权项	A method of tuning the wavelength of light output by a semiconductor light emitting structure after initial operation of that light emitting structure, comprising: forming a first light emitting device including a semiconductor active region that includes gallium, arsenide and nitride, the semiconductor active region designed to emit light; forming a first electrical contact on a first side of the active region and a second electrical contact on a second side of the active region, the electrical contacts to guide electrical current flow through the active region; passing a first current between said first and second electrical contacts and thus through the active region to thereby cause the light emitting structure to emit light at a first wavelength; determining the first wavelength of the light emitted by the light emitting structure; determining a desired second wavelength output of the semiconductor structure; and, changing the amount of hydrogen in the active region designed to emit light to partially change the effects of the nitride in the semiconductor active region such that when said first current flows from the first electrical contact and is directed through the active region to the second electrical contact, the wavelength of light emitted by the semiconductor light emitting structure is changed from said first wavelength to approximately said second wavelength.
申请日期	2005-12-15
专利号	US7764721
专利状态	失效
申请号	US11/300962
公开（公告）号	US7764721
IPC 分类号	H01S5/00
专利代理人	-
代理机构	SMALL, JONATHAN A.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/45047
专题	半导体激光器专利数据库
作者单位	PALO ALTO RESEARCH CENTER INCORPORATED
推荐引用方式 GB/T 7714	CHUA, CHRISTOPHER L.,KNEISSL, MICHAEL A.,JOHNSON, NOBLE M.,et al. System for adjusting the wavelength light output of a semiconductor device using hydrogenation. US7764721[P]. 2010-07-27.