Edge emitting semiconductor laser and semiconductor laser module

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	Edge emitting semiconductor laser and semiconductor laser module
其他题名	Edge emitting semiconductor laser and semiconductor laser module
	CHIDA, HIROAKI
	2005-08-09
专利权人	NEC CORPORATION
公开日期	2005-08-09
授权国家	美国
专利类型	授权发明
摘要	An edge emitting semiconductor laser suppresses the “beam steering” to raise its maximum output with a simple configuration. An optical waveguide serving as a resonator includes an active layer and a cladding layer. A first edge, to which one end of the waveguide is connected, serves as an emission edge. A second edge, to which the other end of the waveguide is connected, is located at an opposite side to the first edge. The waveguide includes at least two parts having different widths, one of the at least two parts being a fundamental mode section. Current injection suppressing means is provided for suppressing or controlling current injection into the active layer in at least part of the fundamental mode section. The current injection suppressing means is preferably made by a current blocking layer, a current-limiting masking layer, or a passive wave-guiding region.
其他摘要	边发射半导体激光器通过简单的配置抑制“光束控制”以提高其最大输出。用作谐振器的光波导包括有源层和包层。波导的一端连接的第一边缘用作发射边缘。波导的另一端连接到的第二边缘位于第一边缘的相对侧。波导包括至少两个具有不同宽度的部分，所述至少两个部分中的一个是基模部分。提供电流注入抑制装置，用于抑制或控制在基模部分的至少一部分中注入有源层的电流。电流注入抑制装置优选地由电流阻挡层，限流掩模层或无源波导区域制成。
主权项	An edge emitting semiconductor laser comprising: an optical waveguide including an active layer and a cladding layer, the waveguide serving as a resonator; a first edge to which one end of the waveguide is connected, the first edge serving as an emission edge; a second edge to which the other end of the waveguide is connected, the second edge being located at an opposite side to the first edge; the waveguide including at least two parts having different widths, one of the at least two parts being a fundamental mode section that allows a fundamental mode to propagate; and current injection suppressing means for suppressing current injection into the active layer in at least part of the fundamental mode section, said current injection suppressing means being located so as to overlay at least a portion of the fundamental mode section located on the longitudinal axis of the waveguide.
申请日期	2002-09-20
专利号	US6928097
专利状态	失效
申请号	US10/247652
公开（公告）号	US6928097
IPC 分类号	H01S5/227 \| H01S5/00 \| H01S5/16 \| H01S5/10 \| H01S5/028 \| H01S5/022 \| G02B6/42 \| H01S5/22
专利代理人	-
代理机构	SUGHRUE MION,PLLC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44718
专题	半导体激光器专利数据库
作者单位	NEC CORPORATION
推荐引用方式 GB/T 7714	CHIDA, HIROAKI. Edge emitting semiconductor laser and semiconductor laser module. US6928097[P]. 2005-08-09.

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