III nitride compound semiconductor element an electrode forming method

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	III nitride compound semiconductor element an electrode forming method
其他题名	III nitride compound semiconductor element an electrode forming method
	SHIBATA, NAOKI; UEMURA, TOSHIYA; ASAI, MAKOTO; KOIDE, YASUO; MURAKAMI, MASANORI
	2004-10-19
专利权人	TOYODA GOSEI CO., LTD.
公开日期	2004-10-19
授权国家	美国
专利类型	授权发明
摘要	An AlN buffer layer 2; a silicon (Si)-doped GaN high-carrier-concentration n layer 3; an Si-doped n-type Al0.07Ga0.93N n-cladding layer 4; an Si-doped n-type GaN n-guide layer 5; an active layer 6 having a multiple quantum well (MQW) structure, and including a Ga0.9In0.1N well layer 61 (thickness: about 2 nm) and a Ga0.97In0.03N barrier layer 62 (thickness: about 4 nm), the layers 61 and 62 being laminated alternately; an Mg-doped GaN p-guide layer 7; an Mg-doped Al0.07Ga0.93N p-cladding layer 8; and an Mg-doped GaN p-contact layer 9 are successively formed on a sapphire substrate. A p-electrode 10 is formed of a film of titanium nitride (TiN) or tantalum nitride (TaN) (thickness: 50 nm). The contact resistance of this electrode is reduced through heat treatment.
其他摘要	AlN缓冲层2;硅（Si）掺杂的GaN高载流子浓度n +层3; Si掺杂的n型Al0.07Ga0.93N n包层4; Si掺杂的n型GaN n导向层5;有源层6具有多量子阱（MQW）结构，并包括Ga0.9In0.1N阱层61（厚度：约2nm）和Ga0.97In0.03N势垒层62（厚度：约4nm），层61和62交替层叠; Mg掺杂的GaN p导向层7; Mg掺杂的Al0.07Ga0.93N p包覆层8;在蓝宝石衬底上依次形成Mg掺杂的GaN p接触层9。 p电极10由氮化钛（TiN）或氮化钽（TaN）（厚度：50nm）的膜形成。通过热处理降低了该电极的接触电阻。
主权项	A Group III nitride compound semiconductor device comprising: a p-type Group III nitride compound semiconductor, and an electrode made of tantalum titanium nitride (Ta.sub.y Ti.sub.1-y N.sub.z), which is formed on said p-type Group III nitride compound semiconductor.
申请日期	2003-02-19
专利号	US6806571
专利状态	授权
申请号	US10/239895
公开（公告）号	US6806571
IPC 分类号	H01L21/285 \| H01L21/02 \| H01L21/24 \| H01L33/00 \| H01S5/323 \| H01S5/02 \| H01S5/00 \| C30B29/38 \| H01L21/205 \| H01L21/28 \| H01L29/43 \| H01L33/06 \| H01L33/12 \| H01L33/32 \| H01L33/40 \| H01S5/042 \| H01S5/343
专利代理人	-
代理机构	MCGINN & GIBB,PLLC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44654
专题	半导体激光器专利数据库
作者单位	TOYODA GOSEI CO., LTD.
推荐引用方式 GB/T 7714	SHIBATA, NAOKI,UEMURA, TOSHIYA,ASAI, MAKOTO,et al. III nitride compound semiconductor element an electrode forming method. US6806571[P]. 2004-10-19.