Nitride-based laser diode with GaN waveguide/cladding layer

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	Nitride-based laser diode with GaN waveguide/cladding layer
其他题名	Nitride-based laser diode with GaN waveguide/cladding layer
	KNEISSL, MICHAEL A.; BOUR, DAVID P.; ROMANO, LINDA T.; VAN DE WALLE, CHRISTIAN G.
	2006-10-17
专利权人	XEROX CORPORATION
公开日期	2006-10-17
授权国家	美国
专利类型	授权发明
摘要	A nitride-based laser diode structure utilizing a single GaN:Mg waveguide/cladding layer, in place of separate GaN:Mg waveguide and AlGaN:Mg cladding layers used in conventional nitride-based laser diode structures. When formed using an optimal thickness, the GaN:Mg layer produces an optical confinement that is comparable to or better than conventional structures. A thin AlGaN tunnel barrier layer is provided between the multiple quantum well and a lower portion of the GaN:Mg waveguide layer, which suppresses electron leakage without any significant decrease in optical confinement. A split-metal electrode is formed on the GaN:Mg upper waveguide structure to avoid absorption losses in the upper electrode metal. A pair of AlGaN:Si current blocking layer sections are located below the split-metal electrode sections, and separated by a gap located over the active region of the multiple quantum well.
其他摘要	利用单个GaN：Mg波导/包层的氮化物基激光二极管结构代替在常规的基于氮化物的激光二极管结构中使用的单独的GaN：Mg波导和AlGaN：Mg包层。当使用最佳厚度形成时，GaN：Mg层产生与传统结构相当或更好的光学限制。在多量子阱和GaN：Mg波导层的下部之间提供薄的AlGaN隧道势垒层，其抑制电子泄漏而没有光学限制的任何显着降低。在GaN：Mg上部波导结构上形成分裂金属电极，以避免上部电极金属中的吸收损失。一对AlGaN：Si电流阻挡层部分位于分裂金属电极部分下方，并由位于多量子阱的有源区上方的间隙隔开。
主权项	A nitride-based laser diode structure comprising: a quantum well region; a waveguide/cladding layer formed on an upper surface of the quantum well region; and a metal electrode formed on an upper surface of the waveguide/cladding layer, wherein the waveguide/cladding layer consists essentially of p-doped Gallium-Nitride (GaN) and extends from the quantum well region to the metal electrode.
申请日期	2003-03-20
专利号	US7123637
专利状态	授权
申请号	US10/394559
公开（公告）号	US7123637
IPC 分类号	H01S5/00 \| H01S5/02 \| H01S5/20 \| H01S5/22 \| H01S5/223 \| H01S5/32 \| H01S5/343
专利代理人	-
代理机构	BEVER,HOFFMAN & HARMS,LLP BEVER, PATRICK T.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44633
专题	半导体激光器专利数据库
作者单位	XEROX CORPORATION
推荐引用方式 GB/T 7714	KNEISSL, MICHAEL A.,BOUR, DAVID P.,ROMANO, LINDA T.,et al. Nitride-based laser diode with GaN waveguide/cladding layer. US7123637[P]. 2006-10-17.

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