Nitride semiconductor light-emitting device and method for fabrication thereof

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	Nitride semiconductor light-emitting device and method for fabrication thereof
其他题名	Nitride semiconductor light-emitting device and method for fabrication thereof
	KONDOU, MASAHUMI; KAMIKAWA, TAKESHI; KAWAGUCHI, YOSHINOBU
	2010-04-20
专利权人	SHARP KABUSHIKI KAISHA
公开日期	2010-04-20
授权国家	美国
专利类型	授权发明
摘要	An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.
其他摘要	在具有氮化物基III-V族化合物半导体层的氮化物半导体激光器条的光学谐振器的小平面上放置六方晶体的粘合层，并且在粘合层上铺设小面涂层。以这种方式，获得其中将小面涂层铺设在粘合层上的结构。
主权项	A nitride semiconductor light-emitting device, comprising: a nitride-based III-V group compound semiconductor layer formed of a hexagonal crystal; and an optical resonator formed in the nitride-based III-V group compound semiconductor layer; wherein an adhesion layer of a hexagonal crystal AlN is formed in contact with the nitride-based III-V group compound semiconductor layer forming a facet of the optical resonator, and a facet coat is formed on a surface of the adhesion layer.
申请日期	2005-12-20
专利号	US7701994
专利状态	授权
申请号	US11/311138
公开（公告）号	US7701994
IPC 分类号	H01S5/00
专利代理人	-
代理机构	HARNESS,DICKEY & PIERCE,P.L.C.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44622
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	KONDOU, MASAHUMI,KAMIKAWA, TAKESHI,KAWAGUCHI, YOSHINOBU. Nitride semiconductor light-emitting device and method for fabrication thereof. US7701994[P]. 2010-04-20.

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