Xi'an Institute of Optics and Precision Mechanics,CAS
Tunable laser source with integrated optical modulator | |
其他题名 | Tunable laser source with integrated optical modulator |
MASON, THOMAS, GORDON, BECK; COLDREN, LARRY, A.; FISH, GREGORY | |
2004-02-27 | |
专利权人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
公开日期 | 2002-04-16 |
授权国家 | 新加坡 |
专利类型 | 发明申请 |
摘要 | A tunable laser source (10) with an integrated optical modulator (20). The laser source (10) is a widely tunable semiconductor laser that is comprised of an active region on top of a thick low bandgap, waveguide layer (22), wherein both the waveguide layer (220) and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator (20) is integrated into the semiconductor laser (10), wherein the electro-absorption modulator (20) shares the waveguide layer (22) with the semiconductor laser. |
其他摘要 | 一种可调谐激光源(10),具有集成光学调制器(20)。激光源(10)是可广泛调谐的半导体激光器,其包括在厚的低带隙顶部的有源区,波导层(22),其中波导层(220)和有源区都在p之间制造。掺杂区和n掺杂区。电吸收调制器(20)集成在半导体激光器(10)中,其中电吸收调制器(20)与半导体激光器共用波导层(22)。 |
主权项 | 1 A tunable laser source comprising a widely tunable semiconductor laser comprised of an active region on top of a thick, low bandgap, waveguide layer, wherem both the waveguide layer and the active region are fabricated between a p-doped region and an n-doped region; and an electro-absorption modulator mtegrated mto the semiconductor laser, wherem the electro-absorption modulator shares the waveguide layer with the semiconductor laser. |
申请日期 | 2000-08-29 |
专利号 | SG87438A1 |
专利状态 | 失效 |
申请号 | SG200201190 |
公开(公告)号 | SG87438A1 |
IPC 分类号 | H01S5/00 |
专利代理人 | - |
代理机构 | SPRUSON & FERGUSON (ASIA) PTE LTD | DREW & NAPIER LLC |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/44605 |
专题 | 半导体激光器专利数据库 |
作者单位 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
推荐引用方式 GB/T 7714 | MASON, THOMAS, GORDON, BECK,COLDREN, LARRY, A.,FISH, GREGORY. Tunable laser source with integrated optical modulator. SG87438A1[P]. 2004-02-27. |
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