Nitride-base semiconductor laser device

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	Nitride-base semiconductor laser device
其他题名	Nitride-base semiconductor laser device
	NOMURA, YASUHIKO; INOUE, DAIJIRO; HATA, MASAYUKI; KANO, TAKASHI
	2006-08-08
专利权人	SANYO ELECTRIC CO., LTD.
公开日期	2006-08-08
授权国家	美国
专利类型	授权发明
摘要	A nitride-based semiconductor laser device capable of attaining stabilization of a laser beam and inhibiting a threshold current and an operating current from increase is provided. This nitride-based semiconductor laser device comprises a substrate consisting of either a nitride-based semiconductor doped with an impurity or a boride-based material, an n-type cladding layer formed on the substrate, an active layer consisting of a nitride-based semiconductor formed on the n-type cladding layer, a p-type cladding layer formed on the active layer and a light guide layer formed only between the active layer and the p-type cladding layer in the interspaces between the active layer and the n- and p-type cladding layers.
其他摘要	提供一种氮化物基半导体激光器件，其能够实现激光束的稳定并且抑制阈值电流和工作电流增加。该氮化物基半导体激光器件包括由掺杂有杂质或硼化物基材料的氮化物基半导体，形成在基板上的n型包覆层，由氮化物基半导体构成的有源层构成的基板形成在n型包覆层上的p型包覆层和在有源层和n-之间的间隙中仅形成在有源层和p型包覆层之间的光导层p型包层。
主权项	A nitride-based semiconductor laser device comprising: a substrate consisting of either a nitride-based semiconductor doped with an impurity or a boride-based material; an n-type cladding layer formed on said substrate; an active layer consisting of a nitride-based semiconductor formed on said n-type cladding layer; a p-type cladding layer formed on said active layer; and a light guide layer formed only between said active layer and said p-type cladding layer, wherein said p-type cladding layer includes a p-type cladding layer consisting of a nitride-based semiconductor having a lattice constant smaller than the lattice constant of GaN, and said light guide layer is constituted of a nitride-based semiconductor having a lattice constant larger than the lattice constant of GaN.
申请日期	2003-09-17
专利号	US7088755
专利状态	失效
申请号	US10/663707
公开（公告）号	US7088755
IPC 分类号	H01S5/00 \| H01S5/20 \| H01S5/343 \| H01S5/02 \| H01S5/042 \| H01S5/223 \| H01S5/32 \| H01S5/323
专利代理人	-
代理机构	MCDERMOTT WILL & EMERY LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44564
专题	半导体激光器专利数据库
作者单位	SANYO ELECTRIC CO., LTD.
推荐引用方式 GB/T 7714	NOMURA, YASUHIKO,INOUE, DAIJIRO,HATA, MASAYUKI,et al. Nitride-base semiconductor laser device. US7088755[P]. 2006-08-08.

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