Nitride semiconductor light emitting element and manufacturing method thereof

OPT OpenIR > 半导体激光器专利数据库

	Nitride semiconductor light emitting element and manufacturing method thereof
其他题名	Nitride semiconductor light emitting element and manufacturing method thereof
	OHNO, TOMOKI; ITO, SHIGETOSHI
	2005-05-24
专利权人	SHARP KABUSHIKI KAISHA
公开日期	2005-05-24
授权国家	美国
专利类型	授权发明
摘要	The object of the present invention is to lower the oscillation threshold value and to improve the yield by improving the luminous efficiency in the central wavelength of a laser. To achieve the object, the nitride semiconductor light emitting element of the present invention includes a substrate, a lower clad layer formed of a nitride semiconductor containing Al and Ga formed thereon, a lower guide layer formed of a nitride semiconductor mainly containing In and Ga formed thereon, and an active layer including a nitride semiconductor mainly containing In and Ga formed thereon. The lower guide layer has a first layer and a second layer higher in In content than the first layer, successively stacked from the active layer side.
其他摘要	本发明的目的是通过提高激光器中心波长的发光效率来降低振荡阈值并提高产量。为了实现该目的，本发明的氮化物半导体发光元件包括基板，由其上形成有Al和Ga的氮化物半导体形成的下包层，由主要包含In和Ga的氮化物半导体形成的下引导层在其上形成有源层，该有源层包括主要含有In和Ga的氮化物半导体。下引导层具有第一层和第二层，第二层的In含量高于第一层，从有源层侧依次堆叠。
主权项	A nitride semiconductor light emitting element, comprising: a substrate; a lower clad layer formed of a nitride semiconductor containing Al and Ga stacked thereon; a lower guide layer formed of a nitride semiconductor mainly containing In and Ga stacked thereon; and an active layer including a nitride semiconductor mainly containing In and Ga stacked thereon; wherein said lower guide layer has a first layer and a second layer higher in In content than said first layer, successively stacked from the active layer side.
申请日期	2003-09-19
专利号	US6897484
专利状态	授权
申请号	US10/666805
公开（公告）号	US6897484
IPC 分类号	H01S5/343 \| H01S5/00 \| H01L33/00 \| H01S5/20 \| H01L33/02 \| H01L33/32 \| H01A29/26
专利代理人	-
代理机构	MORRISON & FOERSTER LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44480
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	OHNO, TOMOKI,ITO, SHIGETOSHI. Nitride semiconductor light emitting element and manufacturing method thereof. US6897484[P]. 2005-05-24.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
US6897484.PDF（302KB）	专利		开放获取	CC BY-NC-SA	请求全文