Semiconductor light-emitting device and method of fabricating the same

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	Semiconductor light-emitting device and method of fabricating the same
其他题名	Semiconductor light-emitting device and method of fabricating the same
	SHAKUDA, YUKIO
	2000-06-06
专利权人	ROHM CO., LTD.
公开日期	2000-06-06
授权国家	美国
专利类型	授权发明
摘要	A structure consisting of a substrate and a gallium nitride based compound semiconductor formed on the substrate includes a light-emitting layer forming portion consisting at least of a semiconductor layer of a first conductivity type (an n-type cladding layer) and a semiconductor layer of a second conductivity type (a p-type cladding layer); a current blocking layer of the first conductivity type, which is formed within a semiconductor layer of the second conductivity type and in close proximity to the light-emitting layer forming portion, and a portion of which is removed in a region where a current flow, and electrodes connected to the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, respectively. In a semiconductor light-emitting device using GaN based compound semiconductors, this structure allows the current blocking layer for defining a current injection region to be formed in close proximity to the light-emitting layer, thus reducing leakage current into regions outside a pattern.
其他摘要	由基板和形成在基板上的氮化镓基化合物半导体构成的结构包括至少由第一导电类型的半导体层（n型包覆层）和半导体层构成的发光层形成部分。第二导电类型（p型包层）;第一导电类型的电流阻挡层，其形成在第二导电类型的半导体层内并且紧邻发光层形成部分，并且其一部分在电流流动的区域中被去除，电极和电极分别连接到第一导电类型的半导体层和第二导电类型的半导体层。在使用GaN基化合物半导体的半导体发光器件中，该结构允许用于限定电流注入区域的电流阻挡层形成在发光层附近，从而减少泄漏到图案外部区域的漏电流。
主权项	A semiconductor light-emitting device comprising: a substrate; a light-emitting layer forming portion consisting at least of a semiconductor layer of a first conductivity type, an active layer and a semiconductor layer of a second conductivity type comprising a gallium nitride based compound semiconductor respectively formed on said substrate; a current blocking layer comprising GaN of the first conductivity type, which is formed within said semiconductor layer of the second conductivity type and in close proximity to said active layer, and a portion of which is removed by thermal etching in a region where a current flows; an etching stop layer comprising a gallium nitride based compound semiconductor containing Al, having a smaller thermal etching rate than that of said current blocking layer, said etching stop layer formed underneath said current blocking layer; a protective layer comprising a gallium nitride based compound semiconductor containing Al, having a smaller thermal etching rate than that of said current blocking layer, said protective layer is provided on said current blocking layer; and electrodes connected to said semiconductor layers of the first and second conductivity types, respectively.
申请日期	1997-05-21
专利号	US6072819
专利状态	失效
申请号	US08/859707
公开（公告）号	US6072819
IPC 分类号	H01L21/205 \| H01L21/02 \| H01L33/00 \| H01L21/00 \| H01L33/14 \| H01L33/32 \| H01S5/00 \| H01S5/22 \| H01S5/323 \| H01S3/085
专利代理人	-
代理机构	NIKAIDO MARMELSTEIN MURRAY & ORAM LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44468
专题	半导体激光器专利数据库
作者单位	ROHM CO., LTD.
推荐引用方式 GB/T 7714	SHAKUDA, YUKIO. Semiconductor light-emitting device and method of fabricating the same. US6072819[P]. 2000-06-06.

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