Electro-optical component

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	Electro-optical component
其他题名	Electro-optical component
	STRITTMATTER, ANDRE; SCHULZE, JAN-HINDRIK; GERMANN, TIM DAVID
	2015-12-29
专利权人	TECHNISCHE UNIVERSITÄT BERLIN
公开日期	2015-12-29
授权国家	美国
专利类型	授权发明
摘要	The invention relates, inter alia, to a method for producing an electro-optical component (10, 200) suitable for emitting electromagnetic radiation (120), wherein in the methoda first intermediate layer (60) is applied on a carrier,a second intermediate layer (70) is applied on the first intermediate layer, andafter the second intermediate layer has been applied, the buried first intermediate layer is locally modified,wherein as a result of the local modification of the buried first intermediate layer in a lateral direction a refractive index jump is produced which brings about a lateral wave guiding of the electromagnetic radiation (120) in the unmodified region of the first intermediate layer.
其他摘要	本发明尤其涉及一种用于制造适合于发射电磁辐射（ 120 ）的电光组件（ 10,2 ）的方法，其中在该方法中第一个中间层（ 60 ）在载体上应用在第一个中间层上应用第二个中间层（ 70 ），和在应用第二个中间层后，隐藏的第一个中间层被本地修改，其中，由于在横向方向上局部修改掩埋的第一中间层，产生折射率跳跃，其引起未修改的电磁辐射（ 120 ）的横向波导。第一个中间层的区域。
主权项	A method for producing an electro-optical component (10, 200) suitable for emitting electromagnetic radiation (120), wherein in the method a first intermediate layer (60) is applied on a carrier, a second intermediate layer (70) is applied on the first intermediate layer, and after the second intermediate layer has been applied, a mesa or ridge structure is etched and the buried first intermediate layer is locally modified laterally from the outside of the mesa or ridge structure, wherein as a result of the local modification of the buried first intermediate layer in a lateral direction a refractive index jump is produced which brings about a lateral wave guiding of the electromagnetic radiation (120) in the unmodified region of the first intermediate layer, wherein the local modification of the first intermediate layer (60) causes a strain both in the first intermediate layer (60) and in the second intermediate layer (70) situated thereabove and forms an elevation (E) in the region above an inner semiconductor region (61) of the first intermediate layer (60) and wherein, after etching the mesa or ridge structure, a third intermediate layer (80) is applied to the second intermediate layer, wherein nanostructures (130) are formed on the second intermediate layer as a result of the strain in the first and second intermediate layers in the region of the outer edges of the elevation (E), due to the strain caused previously in the region of the outer edges of the elevation (E).
申请日期	2012-06-21
专利号	US9225145
专利状态	授权
申请号	US14/127679
公开（公告）号	US9225145
IPC 分类号	H01L21/20 \| H01L21/36 \| H01S5/00 \| H01S5/34 \| H04B10/00 \| H01S5/183 \| H01S5/227 \| H01S5/32 \| B82Y20/00 \| H01S5/20 \| H01L33/00 \| H01L21/02 \| H01S5/22
专利代理人	-
代理机构	GORDON & REES, LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44457
专题	半导体激光器专利数据库
作者单位	TECHNISCHE UNIVERSITÄT BERLIN
推荐引用方式 GB/T 7714	STRITTMATTER, ANDRE,SCHULZE, JAN-HINDRIK,GERMANN, TIM DAVID. Electro-optical component. US9225145[P]. 2015-12-29.

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