Surface emitting laser, surface emitting laser array, light source and optical module

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	Surface emitting laser, surface emitting laser array, light source and optical module
其他题名	Surface emitting laser, surface emitting laser array, light source and optical module
	SHIMIZU, HITOSHI; KAGEYAMA, TAKEO; TAKAKI, KEISHI; IWAI, NORIHIRO
	2013-07-23
专利权人	FURUKAWA ELECTRIC CO., LTD.
公开日期	2013-07-23
授权国家	美国
专利类型	授权发明
摘要	A surface emitting laser is formed of a composition in which bandgap energy of layers from immediately above a current confinement layer to a second conductivity type contact layer is reduced towards the second conductivity type contact layer in a stacking direction, and a composition in which bandgap energy of layers from immediately below the current confinement layer to a first conductivity type contact layer is reduced towards the first conductivity type contact layer in a stacking direction while bypassing a quantum well layer or a quantum dot of an active layer, and includes a second conductivity type cladding layer including a material for reducing the mobility of carriers.
其他摘要	表面发射激光器由这样的组合物形成，其中从电流限制层正上方到第二导电类型接触层的层的带隙能量在堆叠方向上朝向第二导电类型接触层减小，并且其中带隙能量的成分从电流限制层正下方到第一导电类型接触层的层在沿着堆叠方向朝向第一导电类型接触层减小，同时绕过有源层的量子阱层或量子点，并且包括第二导电类型包层包括用于降低载流子迁移率的材料。
主权项	A surface emitting laser, comprising: a substrate; a lower multilayer film reflection mirror formed on the substrate and comprising a periodic structure of a high refractive index layer and a low refractive index layer; a first conductivity type contact layer formed on the lower multilayer film reflection mirror; a first conductivity type cladding layer formed on the first conductivity type contact layer; an active layer formed on the first conductivity type cladding layer; a second conductivity type cladding layer formed on the active layer; a current confinement layer formed on the second conductivity type cladding layer and including a current injection portion made of a material including aluminum and a current confinement portion made of aluminum oxide formed by a selective thermal oxidation process; a second conductivity type contact layer formed on the current confinement layer; an upper multilayer film reflection mirror formed on the second conductivity type contact layer and comprising a periodic structure of a high refractive index layer and a low refractive index layer; a second conductivity type side electrode formed on the second conductivity type contact layer; and a first conductivity type side electrode formed on the first conductivity type contact layer, wherein layers from immediately above the current confinement layer to the second conductivity type contact layer comprise a composition in which bandgap energy is reduced towards the second conductivity type contact layer in a stacking direction, layers from immediately below the current confinement layer to the first conductivity type contact layer comprise a composition in which bandgap energy is reduced towards the first conductivity type contact layer in the stacking direction, while bypassing a quantum well layer or a quantum dot of the active layer, the second conductivity type cladding layer includes a material for reducing mobility of a carrier, and at least one of (i) the bandgap energy of the layers from immediately above the current confinement layer to the second conductivity type contact layer and (ii) the bandgap energy of the layers from immediately below the current confinement layer to the first conductivity type contact layer is reduced in a stepwise manner.
申请日期	2011-03-30
专利号	US8494022
专利状态	授权
申请号	US13/075302
公开（公告）号	US8494022
IPC 分类号	H01S5/00
专利代理人	-
代理机构	LOWE HAUPTMAN HAM & BERNER, LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44456
专题	半导体激光器专利数据库
作者单位	FURUKAWA ELECTRIC CO., LTD.
推荐引用方式 GB/T 7714	SHIMIZU, HITOSHI,KAGEYAMA, TAKEO,TAKAKI, KEISHI,et al. Surface emitting laser, surface emitting laser array, light source and optical module. US8494022[P]. 2013-07-23.

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