Chanelled substrate double heterostructure lasers

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	Chanelled substrate double heterostructure lasers
其他题名	Chanelled substrate double heterostructure lasers
	NOAD, JULIAN P.; SPRINGTHORPE, ANTHONY J.; LOOK, CHRISTOPHER M.
	1982-04-06
专利权人	NORTEL NETWORKS LIMITED
公开日期	1982-04-06
授权国家	美国
专利类型	授权发明
摘要	In fabricating a III-V compound, for example, GaAs, having a layered structure a first layer is grown on a planar substrate by a vapor deposition process adapted to produce differential growth while a subsequent layer is grown by a deposition process which restores planarity. In this way, a uniformly thick combination layer is produced with a non-planar junction between its composite layers. Particularly in the fabrication of channelled substrate double heterostructure lasers, a channelled blocking layer is grown by organo-metallic pyrolysis (OMP) and a subsequent confining layer is grown using liquid phase epitaxy (LPE). The OMP process produces a channel with flanking shoulder portions which permit LPE growth of a very thin confining layer immediately above the shoulder portions thereby improving linearity of the device.
其他摘要	在制造具有层状结构的III-V族化合物（例如，GaAs）时，通过适于产生差异生长的气相沉积工艺在平面基板上生长第一层，同时通过恢复平面性的沉积工艺生长后续层。以这种方式，产生均匀厚度的组合层，其复合层之间具有非平面结。特别是在通道衬底双异质结构激光器的制造中，通过有机金属热解（OMP）生长通道阻挡层，并且使用液相外延（LPE）生长随后的限制层。 OMP工艺产生具有侧翼肩部的通道，其允许LPE在肩部的正上方生长非常薄的约束层，从而改善装置的线性度。
主权项	A double heterostructure semiconductor laser comprising: a substrate; a blocking layer; a first confining layer; an active layer; a second confining layer; top and bottom contacts for directing current across a pn junction existing between the active layer and the first confining layer to generate light thereat; an np junction between the first confining layer and a blocking layer acting to confine current passage to a predetermined region of said pn junction; the blocking layer having a channel underlying said predetermined region, said first confining layer extending into the channel; the laser having opposed planar reflecting facets defining a resonant cavity; and wherein the blocking layer has raised shoulder portions flanking the channel and the first confining layer is thinner where it overlies the raised shoulder portions than at a location remote from the channel.
申请日期	1980-02-04
专利号	US4323859
专利状态	失效
申请号	US06/118653
公开（公告）号	US4323859
IPC 分类号	H01L33/00 \| H01S5/223 \| H01S5/00 \| H01S3/19
专利代理人	-
代理机构	WILKINSON, STUART L.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44454
专题	半导体激光器专利数据库
作者单位	NORTEL NETWORKS LIMITED
推荐引用方式 GB/T 7714	NOAD, JULIAN P.,SPRINGTHORPE, ANTHONY J.,LOOK, CHRISTOPHER M.. Chanelled substrate double heterostructure lasers. US4323859[P]. 1982-04-06.

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