Light-emitting array

OPT OpenIR > 半导体激光器专利数据库

	Light-emitting array
其他题名	Light-emitting array
	LEE, SHIH-CHANG; LU, CHIH-CHIANG; LIN, YI-HUNG; LO, WU-TSUNG; KUO, TA-CHUAN
	2015-10-06
专利权人	EPISTAR CORPORATION
公开日期	2015-10-06
授权国家	美国
专利类型	授权发明
摘要	A light-emitting array comprises a plurality of light-emitting elements, wherein each of the plurality of light-emitting elements comprises a first semiconductor stack; and a plurality of bridge structures connected to the plurality of light-emitting elements, wherein the plurality of light-emitting elements are spaced apart by the plurality of bridge structures, wherein each of the plurality of bridge structures comprise a second semiconductor stack which has the same epitaxial stack as the first semiconductor stack.
其他摘要	发光阵列包括多个发光元件，其中所述多个发光元件中的每一个包括第一半导体叠层;连接到所述多个发光元件的多个桥结构，其中所述多个发光元件由所述多个桥结构间隔开，其中所述多个桥结构中的每一个包括第二半导体叠层，所述第二半导体叠层具有所述多个发光元件。与第一半导体叠层相同的外延叠层。
主权项	A light-emitting array, comprising: a plurality of light-emitting elements, wherein each of the plurality of light-emitting elements comprises a first semiconductor stack; a plurality of bridge structures connected to the plurality of light-emitting elements, wherein the plurality of light-emitting elements is spaced apart by the plurality of bridge structures, wherein each of the plurality of bridge structures comprises a second semiconductor stack which has the same epitaxial stack as the first semiconductor stack, the first semiconductor stack and the second semiconductor stack each comprises a top mirror stack having a first conductivity type, a bottom mirror stack having a second conductivity type, and an active layer formed between the top mirror stack and the bottom mirror stack; and a confinement layer with a aluminum composition higher than that of any other layer of the top mirror stack, wherein the confinement layer is formed in the first semiconductor stack and the second semiconductor stack; wherein the confinement layer in the second semiconductor stack is a continuous layer without forming any opening, and is continuously connected to the confinement layer in the first semiconductor stack.
申请日期	2014-02-05
专利号	US9153944
专利状态	授权
申请号	US14/173650
公开（公告）号	US9153944
IPC 分类号	H01S5/00 \| H01S5/343 \| H01S5/042 \| H01S5/42 \| H01S5/183
专利代理人	-
代理机构	DITTHAVONG & STEINER, P.C.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44432
专题	半导体激光器专利数据库
作者单位	EPISTAR CORPORATION
推荐引用方式 GB/T 7714	LEE, SHIH-CHANG,LU, CHIH-CHIANG,LIN, YI-HUNG,et al. Light-emitting array. US9153944[P]. 2015-10-06.

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