Semiconductor light emitting device with Group II-VI and III-V semiconductors

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	Semiconductor light emitting device with Group II-VI and III-V semiconductors
其他题名	Semiconductor light emitting device with Group II-VI and III-V semiconductors
	SHAKUDA, YUKIO
	1995-12-19
专利权人	ROHM CO., LTD.
公开日期	1995-12-19
授权国家	美国
专利类型	授权发明
摘要	In a semiconductor light emitting device of a group II-V semiconductor, a current blocking layer for passing the current only through a central stripe area is formed in one of the two light clad layers sandwiching an active layer, so that the light emission efficiency improves and a light guiding path is provided. In a process for forming each layer on a substrate through epitaxial growth, the central stripe area is formed by etching the current blocking layer.
其他摘要	在II-V族半导体的半导体发光器件中，在夹着有源层的两个光覆层中的一个中形成用于仅使电流通过中心条带区域的电流阻挡层，从而提高发光效率并提供光导路径。在通过外延生长在衬底上形成每层的工艺中，通过蚀刻电流阻挡层形成中心条纹区域。
主权项	A semiconductor light emitting device comprising: a GaAs substrate of a first conductivity type; a first clad layer comprising a group II-VI semiconductor of the first conductivity type; an active layer comprising a group II-VI semiconductor, said active layer formed on the first clad layer; a second clad layer comprising a group II-VI semiconductor of a second conductivity type opposite to the first conductivity type, said second clad layer formed on the active layer; a current blocking layer comprising a group III-V semiconductor of the first conductivity type, said current blocking layer formed on the second clad layer so that a central stripe area of the second clad layer is not covered by said current blocking layer; and a third clad layer comprising a group II-VI semiconductor of the second conductivity type, said third clad layer formed on the current blocking layer and the central stripe area of the second clad layer.
申请日期	1994-06-15
专利号	US5477063
专利状态	失效
申请号	US08/260982
公开（公告）号	US5477063
IPC 分类号	H01S5/327 \| H01L33/00 \| H01S5/00 \| H01S5/22 \| H01S5/223 \| H01L33/12 \| H01L33/14 \| H01L33/28 \| H01L33/30 \| H01L33/40
专利代理人	-
代理机构	NIKAIDO MARMELSTEIN MURRAY & ORAM
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44401
专题	半导体激光器专利数据库
作者单位	ROHM CO., LTD.
推荐引用方式 GB/T 7714	SHAKUDA, YUKIO. Semiconductor light emitting device with Group II-VI and III-V semiconductors. US5477063[P]. 1995-12-19.

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