Vertical-cavity surface-emitting lasers with antiresonant reflecting optical waveguides

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	Vertical-cavity surface-emitting lasers with antiresonant reflecting optical waveguides
其他题名	Vertical-cavity surface-emitting lasers with antiresonant reflecting optical waveguides
	MAWST, LUKE J.; ZHOU, DELAI
	2002-05-28
专利权人	WISCONSIN ALUMNI RESEARCH FOUNDATION
公开日期	2002-05-28
授权国家	美国
专利类型	授权发明
摘要	A vertical cavity surface emitting semiconductor laser is formed with a multilayer structure on a semiconductor substrate that includes an active region layer, a central core, and an antiresonant reflecting waveguide ring surrounding the central core. The ring includes a region formed to have an effective higher index than the central core and sized to provide antiresonant lateral waveguiding confinement of a fundamental mode wavelength. Reflectors formed above and below the active region layer provide vertical confinement. The antiresonant reflecting ring may be formed either as a full ARROW structure including a quarter wavelength high effective index region and a quarter wavelength low effective index region or as a simplified ARROW structure having a single quarter wavelength high effective index region. The antiresonant reflecting ring provides efficient lateral confinement of the fundamental mode while allowing lateral leakage of higher modes to substantially suppress these modes, resulting in substantially single mode operation at relatively high powers.
其他摘要	在半导体衬底上形成具有多层结构的垂直腔表面发射半导体激光器，该半导体衬底包括有源区层，中心纤芯和围绕中心纤芯的反谐振反射波导环。该环包括形成为具有比中心纤芯有效更高的折射率并且尺寸设计成能够提供基模波长的反共振横向波导限制的区域。在有源区域层上方和下方形成的反射器提供垂直限制。反谐振反射环可以形成为包括四分之一波长高有效折射率区域和四分之一波长低有效折射率区域的全ARROW结构，或者形成为具有单个四分之一波长高有效折射率区域的简化ARROW结构。反谐振反射环提供基模的有效横向限制，同时允许较高模式的横向泄漏以基本上抑制这些模式，导致在相对高的功率下基本上单模操作。
主权项	A vertical cavity surface-emitting semiconductor laser comprising: a semiconductor substrate and a multilayer structure on the substrate including a layer with an active region at which light emission occurs, upper and lower layers surrounding the active region layer, upper and lower faces, electrodes by which voltage can be applied across the multilayer structure and the substrate, a central core, an antiresonant reflecting waveguide ring surrounding the central core having a region formed to have an effective higher index than the central core, the waveguide ring providing antiresonant lateral waveguiding confinement of a fundamental mode lateral wavelength, an upper reflector above the active region layer and a lower reflector below the active region layer, the reflecting ring and the upper and lower reflectors positioned to act upon the light generated in the active region to produce lasing action and emission of light from at least one of the upper and lower faces of the semiconductor laser, and including means for confining the current from the electrodes to the central core.
申请日期	2000-10-27
专利号	US6396865
专利状态	授权
申请号	US09/699050
公开（公告）号	US6396865
IPC 分类号	H01S5/183 \| H01S5/00 \| H01S51/83
专利代理人	-
代理机构	FOLEY & LARDNER
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44399
专题	半导体激光器专利数据库
作者单位	WISCONSIN ALUMNI RESEARCH FOUNDATION
推荐引用方式 GB/T 7714	MAWST, LUKE J.,ZHOU, DELAI. Vertical-cavity surface-emitting lasers with antiresonant reflecting optical waveguides. US6396865[P]. 2002-05-28.

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