Semiconductor optical element for external cavity laser

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	Semiconductor optical element for external cavity laser
其他题名	Semiconductor optical element for external cavity laser
	MORI, HIROSHI; YAMADA, ATSUSHI; SAMEJIMA, TAKAHIRO
	2010-10-12
专利权人	ANRITSU CORPORATION
公开日期	2010-10-12
授权国家	美国
专利类型	授权发明
摘要	The present invention provides a semiconductor optical element applicable to an EC-LD or an SLD, and an external cavity laser having the semiconductor optical element. The semiconductor optical element has a pair of cleavage surfaces, and comprises a semiconductor substrate 11 having a base surface and a planer structure provided on the base surface and provided with a waveguide 1G having an active layer. The waveguide 1G has an end surface with low reflectivity and another end surface with certain reflectivity. The waveguide 1G includes an end portion having a first optical axis in the vicinity of the first end surface 1TL and an end portion having a second optical axis in the vicinity of the second end surface 1TH, the first optical axis being inclined at a first angle ΦL other than zero degree with respect to a normal to the first end surface 1TL, the second optical axis being inclined at a second angle ΦH other than zero degree with respect to a normal to the second end surface 1TH, the first angle ΦL being different from the second angle ΦH. The end portion of the waveguide 1G is different in width from the other end portion of the waveguide 1G.
其他摘要	本发明提供适用于EC-LD或SLD的半导体光学元件，以及具有该半导体光学元件的外腔激光器。半导体光学元件具有一对解理面，并且包括半导体衬底11，该半导体衬底11具有基面和平面结构，该平面结构设置在基面上并设置有具有有源层的波导1G。波导1G具有低反射率的端面和具有一定反射率的另一端面。波导1G包括在第一端面1TL附近具有第一光轴的端部和在第二端面1TH附近具有第二光轴的端部，第一光轴以第一角度倾斜ΦL相对于第一端面1TL的法线不是零度，第二光轴相对于第二端面1TH的法线以零度以外的第二角度ΦH倾斜，第一角度ΦL不同从第二角度ΦH。波导1G的端部的宽度与波导1G的另一端部的宽度不同。
主权项	A semiconductor optical element for an external cavity laser having a pair of cleavage surfaces, comprising: a semiconductor substrate having a base surface; and a planer structure provided on said base surface, and provided with a waveguide having an active layer, wherein said waveguide has first and second end surfaces defined by said respective cleavage surfaces, said first end surface of said waveguide has first reflectivity, and said second end surface of said waveguide has second reflectivity, said waveguide includes one end portion having an optical axis being at a first angle to a normal to said first end surface, and one end portion having an optical axis being at a second angle to a normal to said second end surface, said waveguide guides light so that said light is output from said first end surface in a first direction, and that said light is output from said second end surface in a second direction parallel to said first direction, and said light guided by said waveguide in the vicinity of said first end surface has a first spot size measured in a lateral direction of said waveguide, and said light guided by said waveguide in the vicinity of said second end surface has a second spot size measured in said lateral direction of said waveguide, said first spot size being different from said second spot size to make said first reflectivity be different from said second reflectivity.
申请日期	2006-09-27
专利号	US7813398
专利状态	失效
申请号	US12/067601
公开（公告）号	US7813398
IPC 分类号	H01S5/00 \| H01L33/00
专利代理人	-
代理机构	GREER,BURNS & CRAIN,LTD.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44386
专题	半导体激光器专利数据库
作者单位	ANRITSU CORPORATION
推荐引用方式 GB/T 7714	MORI, HIROSHI,YAMADA, ATSUSHI,SAMEJIMA, TAKAHIRO. Semiconductor optical element for external cavity laser. US7813398[P]. 2010-10-12.

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