Semiconductor material of light emitting element provided with distorted active layer

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor material of light emitting element provided with distorted active layer
其他题名	Semiconductor material of light emitting element provided with distorted active layer
	TADATOMO KAZUYUKI; WATABE SHINICHI; MAEDA SHIGEO; TOYAMA OSAMU
专利权人	MITSUBISHI CABLE IND LTD
公开日期	1992-12-22
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable a light emitting element to be kept high in characteristics and to emit pure green light of high intensity. CONSTITUTION:A GaP clad layer 2, a GaInP single distorted quantum well type active layer 3, and a GaP clad layer 4 are successively grown on a GaP substrate The active layer 3 is controlled in mixed crystal ratio and thickness by the effect of the distorted quantum well (formation of quantum well level), whereby light emitted from the layer 3 can be controlled in wavelength. As a light emitting element of this design is very simple in structure, it can be simplified in manufacturing process, and as a result it can be improved in mass- productivity and profitability. As Al is not required, the element concerned is sharply improved in moisture resistance.
其他摘要	用途：使发光元件保持高特性并发出高强度的纯绿光。组成：GaP包层2，GaInP单扭曲量子阱型有源层3和GaP包层4连续生长在GaP衬底1上。有源层3通过混合晶体比率和厚度控制。失真的量子阱（量子阱能级的形成），从而可以控制从层3发射的光的波长。由于该设计的发光元件结构非常简单，因此可以简化制造过程，并因此可以提高批量生产率和盈利能力。由于不需要Al，所以相关元件的耐湿性大大提高。
申请日期	1991-08-30
专利号	JP1992369874A
专利状态	失效
申请号	JP1991246758
公开（公告）号	JP1992369874A
IPC 分类号	H01L21/02 \| H01L21/20 \| H01L21/34 \| H01L33/06 \| H01L33/10 \| H01L33/14 \| H01L33/20 \| H01L33/28 \| H01L33/30 \| H01L33/34 \| H01L33/38 \| H01L33/40 \| H01S5/00 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/44064
专题	半导体激光器专利数据库
作者单位	MITSUBISHI CABLE IND LTD
推荐引用方式 GB/T 7714	TADATOMO KAZUYUKI,WATABE SHINICHI,MAEDA SHIGEO,et al. Semiconductor material of light emitting element provided with distorted active layer. JP1992369874A.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1992369874A.PDF（165KB）	专利		开放获取	CC BY-NC-SA	请求全文