Article comprising a SiOx layer and method of making the article

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	Article comprising a SiOx layer and method of making the article
其他题名	Article comprising a SiOx layer and method of making the article
	CHAND, NARESH; OSENBACH, JOHN WILLIAM; COMIZZOLI, ROBERT BENEDICT; ROXLO, CHARLES BLAKELY; TSANG,WON-TIEN; KOLA,RATNAJI RAO
专利权人	AT&T IPM CORP.
公开日期	1995-10-11
授权国家	欧洲专利局
专利类型	发明申请
摘要	The invention is embodied in high reliability semiconductor lasers that need not be maintained inside a hermetic enclosure. Such lasers can advantageously be used in a variety of applications, e.g., in optical fiber telecommunications, and in compact disc players. Such "non-hermetic" lasers comprise facet coatings (e.g., 401, 41) that comprise a dielectric layer (e.g., 401, 41) that has very low water saturation value. In preferred embodiments this dielectric layer is SiOx (1 Z x < 2), deposited by a molecular beam method. Deposition conditions are selected to result in a dense material that is largely free of particulates and blisters, and is substantially impermeable to moisture. Among the deposition conditions is substantially normal beam incidence, and a relatively low deposition rate. Deposition is advantageously carried out under relatively high vacuum conditions. A quantitative method of determining the water level in a SiOx film is disclosed. The invention is also embodied in articles (e.g., integrated circuits or discrete semiconductor devices) that have a low stress (absolute value less than 90 MPa, even less than 20 MPa) SiOx layer disposed on a semiconductor body.
其他摘要	本发明体现在高可靠性半导体激光器中，其不需要保持在密封外壳内。这种激光器可以有利地用于各种应用中，例如用于光纤通信和光盘播放器中。这种“非密封”激光器包括小面涂层（例如，401,41），其包括具有非常低的水饱和度值的介电层（例如，401,41）。在优选实施例中，该介电层是SiOx（1 Z x <2），通过分子束方法沉积。选择沉积条件以产生基本上不含颗粒和水泡的致密材料，并且基本上不透水分。在沉积条件中，基本上是正常的光束入射，并且沉积速率相对较低。沉积有利地在相对高的真空条件下进行。公开了一种确定SiOx膜中水位的定量方法。本发明还体现在具有设置在半导体本体上的低应力（绝对值小于90MPa，甚至小于20MPa）的SiOx层的制品（例如，集成电路或分立半导体器件）中。
申请日期	1995-03-29
专利号	EP0676797A2
专利状态	失效
申请号	EP1995302114
公开（公告）号	EP0676797A2
IPC 分类号	H01L21/3105 \| H01L21/316 \| H01L33/44 \| H01S5/00 \| H01S5/022 \| H01S5/028 \| C30B23/02 \| C30B29/16 \| H01S3/025
专利代理人	-
代理机构	JOHNSTON, KENNETH GRAHAM
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/43990
专题	半导体激光器专利数据库
作者单位	AT&T IPM CORP.
推荐引用方式 GB/T 7714	CHAND, NARESH,OSENBACH, JOHN WILLIAM,COMIZZOLI, ROBERT BENEDICT,et al. Article comprising a SiOx layer and method of making the article. EP0676797A2.

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EP0676797A2.PDF（770KB）	专利		开放获取	CC BY-NC-SA	请求全文