Xi'an Institute of Optics and Precision Mechanics,CAS
Thz semiconductor laser incorporating a controlled plasmon confinement waveguide | |
其他题名 | Thz semiconductor laser incorporating a controlled plasmon confinement waveguide |
TREDICUCCI, ALESSANDRO; BELTRAM, FABIO; KOEHLER, RUEDEGER; BEERE, HARVEY, EDWARD; DAVIES, ALEXANDER, GILES; LINFIELD, EDMUND, HAROLD | |
专利权人 | SCUOLA NORMALE SUPERIORE (SNS) |
公开日期 | 2005-06-02 |
授权国家 | 美国 |
专利类型 | 发明申请 |
摘要 | A semiconductor laser comprises an active region (12) which, in response to a pumping energy applied thereto, can produce a stimulated emission of radiation with a central wavelength (λ) in the far infrared region, and a confinement region (16, 18, 22) suitable for confining the radiation in the active region (12), and comprising at least one interface (16a, 16b, 22a) between adjacent layers that is capable of supporting surface plasmon modes generated by an interaction of the interface with the radiation. The confinement region (16, 18, 22) comprises a wave-guide layer (16) which is delimited on opposite sides by a first interface and by a second interface (16a, 16b). The guide layer (16) is doped in a manner such that the first and second interfaces (16a, 16b) are capable of supporting the plasmon modes, respectively, and is of a thickness (d) such as to bring about the accumulation of the plasmon modes in proximity to the first and second interfaces (16a, 16b), outside the layer (16), and substantially a suppression of the plasmon modes, inside the layer. |
其他摘要 | 半导体激光器包括有源区域(12),该有源区域响应于施加到其上的泵浦能量,可以产生在远红外区域中具有中心波长(λ)的辐射的受激发射,以及限制区域(16,18, 22)适于将辐射限制在有源区域(12)中,并且包括相邻层之间的至少一个界面(16a,16b,22a),其能够支持由界面与辐射的相互作用产生的表面等离子体模式。限制区域(16,18,22)包括波导层(16),该波导层(16)在相对侧由第一界面和第二界面(16a,16b)界定。引导层(16)以这样的方式掺杂,使得第一和第二界面(16a,16b)分别能够支持等离子体激元模式,并且具有厚度(d),以便引起积聚。等离子体模式靠近第一和第二界面(16a,16b),在层(16)外面,并且基本上抑制等离子体模式,在层内。 |
申请日期 | 2003-03-24 |
专利号 | US20050117618A1 |
专利状态 | 授权 |
申请号 | US10/508996 |
公开(公告)号 | US20050117618A1 |
IPC 分类号 | H01S5/343 | H01S5/10 | H01S5/20 | H01S5/22 | H01S5/32 | H01S5/34 | H01S5/00 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/43983 |
专题 | 半导体激光器专利数据库 |
作者单位 | SCUOLA NORMALE SUPERIORE (SNS) |
推荐引用方式 GB/T 7714 | TREDICUCCI, ALESSANDRO,BELTRAM, FABIO,KOEHLER, RUEDEGER,et al. Thz semiconductor laser incorporating a controlled plasmon confinement waveguide. US20050117618A1. |
条目包含的文件 | 条目无相关文件。 |
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