Group III Nitride LED with Undoped Cladding Layer

OPT OpenIR > 半导体激光器专利数据库

	Group III Nitride LED with Undoped Cladding Layer
其他题名	Group III Nitride LED with Undoped Cladding Layer
	EDMOND, JOHN ADAM; DOVERSPIKE, KATHLEEN MARIE; KONG, HUA-SHUANG; BERGMANN, MICHAEL JOHN
专利权人	CREE, INC.
公开日期	2006-10-19
授权国家	美国
专利类型	发明申请
摘要	The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer.
其他摘要	本发明是一种用于发光器件的半导体结构，其能够发射电磁光谱的红色至紫外部分。半导体结构包括位于第一n型III族氮化物包层和第二n型III族氮化物包层之间的III族氮化物有源层，第一和第二n型包层的各自的带隙大于有源层的带隙。半导体结构还包括p型III族氮化物层，其位于半导体结构中，使得第二n型包覆层位于p型层和有源层之间。
申请日期	2006-05-22
专利号	US20060233211A1
专利状态	授权
申请号	US11/419523
公开（公告）号	US20060233211A1
IPC 分类号	H01S5/00 \| H01L33/06 \| H01L33/32 \| H01S5/323 \| H01S5/343
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/43940
专题	半导体激光器专利数据库
作者单位	CREE, INC.
推荐引用方式 GB/T 7714	EDMOND, JOHN ADAM,DOVERSPIKE, KATHLEEN MARIE,KONG, HUA-SHUANG,et al. Group III Nitride LED with Undoped Cladding Layer. US20060233211A1.