Manufacture of optical semiconductor element and growing method for low resistance semiconductor layer

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	Manufacture of optical semiconductor element and growing method for low resistance semiconductor layer
其他题名	Manufacture of optical semiconductor element and growing method for low resistance semiconductor layer
	CHICHIBU SHIGEHIDE; KUSHIBE MITSUHIRO; HIRAYAMA YUZO; FUNAMIZU MASAHISA; ONOMURA MASAAKI; EGUCHI KAZUHIRO
专利权人	TOSHIBA CORP
公开日期	1991-09-03
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To separate a pn homojunction position from a board-regrowth boundary and to reduce an increase in a rising voltage or a reverse leakage current by automatically diffusing impurities of a high concentration p-type layer of a p-type InP clad layer during growing. CONSTITUTION:When Zn concentration is so controlled as to be gradually reduced continuously from saturated concentration in a thermal equilibrium as separated from an active layer by using dimethyl zinc to reduce the saturated concentration to at least 40% or more, its growth is started, for example, at an arbitrary temperature from 550 to 600 deg.C, and ended at an arbitrary temperature from 620 to 680 deg.C to be controlled in the concentration. Then, gas flow in a reaction tube may not be disordered. Accordingly, irregularities in the composition, concentration in a growing wafer, fluctuations can be reduced. That is, doping concentration is varied by not altering dopant gas flow but fixing to a predetermined value.
其他摘要	目的：通过在生长期间自动扩散p型InP包层的高浓度p型层的杂质，将pn同质结位置与板再生边界分离并减少上升电压或反向漏电流的增加。组成：当通过使用二甲基锌将饱和浓度降低至至少40％或更多时，控制Zn浓度从热平衡中的饱和浓度连续逐渐降低与活性层分离，从而开始生长，例如，在550至600℃的任意温度下，以620至680℃的任意温度结束以控制浓度。然后，反应管中的气流可能不会混乱。因此，可以减少组合物的不规则性，生长晶片中的浓度，波动。即，通过不改变掺杂剂气体流量而是固定到预定值来改变掺杂浓度。
申请日期	1989-12-28
专利号	JP1991201585A
专利状态	失效
申请号	JP1989342418
公开（公告）号	JP1991201585A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/43756
专题	半导体激光器专利数据库
作者单位	TOSHIBA CORP
推荐引用方式 GB/T 7714	CHICHIBU SHIGEHIDE,KUSHIBE MITSUHIRO,HIRAYAMA YUZO,et al. Manufacture of optical semiconductor element and growing method for low resistance semiconductor layer. JP1991201585A.

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