Highly efficient gallium nitride based light emitting diodes via surface roughening

OPT OpenIR > 半导体激光器专利数据库

	Highly efficient gallium nitride based light emitting diodes via surface roughening
其他题名	Highly efficient gallium nitride based light emitting diodes via surface roughening
	FUJII, TETSUO; GAO, YAN; HU, EVELYN L.; NAKAMURA, SHUJI
专利权人	JAPAN SCIENCE AND TECHNOLOGY AGENCY
公开日期	2007-05-31
授权国家	美国
专利类型	发明申请
摘要	A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
其他摘要	基于氮化镓（GaN）的发光二极管（LED），其中光通过LED的氮面（N面）（42）提取，并且N面（42）的表面被粗糙化为一个或多个六角形锥体。粗糙表面减少了LED内部重复出现的光反射，从而从LED中提取更多光。通过各向异性蚀刻使N面（42）的表面粗糙化，该蚀刻可以包括干蚀刻或光增强化学（PEC）蚀刻。
申请日期	2003-12-09
专利号	US20070121690A1
专利状态	授权
申请号	US10/581940
公开（公告）号	US20070121690A1
IPC 分类号	H01S5/00 \| H01L33/30 \| H01L21/465 \| H01L29/06 \| H01L29/20 \| H01L33/22 \| H01L33/32
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/43737
专题	半导体激光器专利数据库
作者单位	JAPAN SCIENCE AND TECHNOLOGY AGENCY
推荐引用方式 GB/T 7714	FUJII, TETSUO,GAO, YAN,HU, EVELYN L.,et al. Highly efficient gallium nitride based light emitting diodes via surface roughening. US20070121690A1.