Method to achieve active p-type layer/layers in iii-nitride epitaxial or device structures having buried p-type layers

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	Method to achieve active p-type layer/layers in iii-nitride epitaxial or device structures having buried p-type layers
其他题名	Method to achieve active p-type layer/layers in iii-nitride epitaxial or device structures having buried p-type layers
	ENATSU, YUUKI; GUPTA, CHIRAG; KELLER, STACIA; MISHRA, UMESH K.; AGARWAL, ANCHAL
专利权人	THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
公开日期	2017-10-19
授权国家	世界知识产权组织
专利类型	发明申请
摘要	An optoelectronic or electronic device structure, including an active region on or above a polar substrate, wherein the active region comprises a polar p region. The device structure further includes a hole supply region on or above the active region. Holes in the hole supply region are driven by a field into the active region, the field arising at least in part due to a piezoelectric and/or spontaneous polarization field generated by a composition and grading of the active region.
其他摘要	一种光电或电子器件结构，包括在极性衬底上或上方的有源区，其中有源区包括极性p区。器件结构还包括在有源区上或上方的空穴供应区。空穴供应区域中的空穴由进入有源区域的场驱动，该场至少部分地由于由有源区域的组成和分级产生的压电和/或自发极化场而产生。
申请日期	2017-04-11
专利号	WO2017180633A1
专利状态	未确认
申请号	PCT/US2017/027025
公开（公告）号	WO2017180633A1
IPC 分类号	G02B6/42 \| H01L21/00 \| H01L29/66 \| H01L33/08 \| H01L41/253 \| H02N2/00
专利代理人	SERAPIGLIA, GERARD B.
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/43593
专题	半导体激光器专利数据库
作者单位	THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
推荐引用方式 GB/T 7714	ENATSU, YUUKI,GUPTA, CHIRAG,KELLER, STACIA,et al. Method to achieve active p-type layer/layers in iii-nitride epitaxial or device structures having buried p-type layers. WO2017180633A1.