Methods of manufacturing light emitting diodes including barrier layers/sublayers

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	Methods of manufacturing light emitting diodes including barrier layers/sublayers
其他题名	Methods of manufacturing light emitting diodes including barrier layers/sublayers
	SLATER, DAVID B. JR.; WILLIAMS, BRADLEY E.; ANDREWS, PETER S.; EDMOND, JOHN A.; ALLEN, SCOTT T.
专利权人	CREE, INC.
公开日期	2007-07-12
授权国家	美国
专利类型	发明申请
摘要	Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
其他摘要	诸如发光二极管的半导体发光器件包括衬底，在衬底上的外延区域，该外延区域包括诸如发光二极管区域的发光区域，以及在外延区域上包括反射器层的多层导电叠层。阻挡层设置在反射器层上并在反射器层的侧壁上延伸。多层导电叠层还可以包括在反射器和外延区域之间的欧姆层。阻挡层还在欧姆层的侧壁上延伸。阻挡层也可以延伸到多层导电叠层外部的外延区上。阻挡层可以制造成一系列交替的第一和第二子层。
申请日期	2007-03-20
专利号	US20070161137A1
专利状态	授权
申请号	US11/688605
公开（公告）号	US20070161137A1
IPC 分类号	H01L21/00 \| H01L33/20 \| H01L33/40 \| H01L33/44 \| H01L33/62
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/43553
专题	半导体激光器专利数据库
作者单位	CREE, INC.
推荐引用方式 GB/T 7714	SLATER, DAVID B. JR.,WILLIAMS, BRADLEY E.,ANDREWS, PETER S.,et al. Methods of manufacturing light emitting diodes including barrier layers/sublayers. US20070161137A1.