Nitride-based semiconductor light-emitting device and method of manufacturing the same

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	Nitride-based semiconductor light-emitting device and method of manufacturing the same
其他题名	Nitride-based semiconductor light-emitting device and method of manufacturing the same
	YOON, SUK-HO; SONE, CHEOL-SOO; LEE, JEONG-WOOK; KIM, JOO-SUNG
专利权人	SAMSUNG ELECTRONICS CO., LTD.
公开日期	2007-08-30
授权国家	美国
专利类型	发明申请
摘要	A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the operations of sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer.
其他摘要	提供一种氮化物基半导体发光器件及其制造方法，所述氮化物基半导体发光器件具有改善的结构以提高光提取效率。该方法包括在衬底上顺序形成n覆层，有源层和p覆层的操作;在p覆层的上表面上形成多个掩蔽点;在掩模点之间的p-包层的部分上形成具有粗糙表面的p-接触层;通过从p接触层的上表面的一部分干蚀刻到所需的深度，形成具有与p接触层的粗糙形状相同的粗糙形状的n覆层的粗糙n接触表面n包层;在粗糙的n接触表面上形成n电极;在p接触层上形成p电极。
申请日期	2007-01-04
专利号	US20070202624A1
专利状态	授权
申请号	US11/649237
公开（公告）号	US20070202624A1
IPC 分类号	H01L21/00 \| H01L33/22 \| H01L33/32
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/43549
专题	半导体激光器专利数据库
作者单位	SAMSUNG ELECTRONICS CO., LTD.
推荐引用方式 GB/T 7714	YOON, SUK-HO,SONE, CHEOL-SOO,LEE, JEONG-WOOK,et al. Nitride-based semiconductor light-emitting device and method of manufacturing the same. US20070202624A1.