Method of making an article comprising an oxide layer on a GaAs-based semiconductor body

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	Method of making an article comprising an oxide layer on a GaAs-based semiconductor body
其他题名	Method of making an article comprising an oxide layer on a GaAs-based semiconductor body
	CHEN, YOUNG-KAI; CHO, ALFRED YI; HOBSON, WILLIAM SCOTT; HONG, MINGHWEI; KUO, JENN-MING; KWO, JUEINAI RAYNIEN; MURPHY, DONALD WINSLOW; REN, FAN
	2001-08-07
专利权人	AGERE SYSTEMS GUARDIAN CORP.
公开日期	2001-08-07
授权国家	美国
专利类型	授权发明
摘要	Disclosed are a method of making GaAs-based enhancement-type MOS-FETs, and articles (e.g., GaAs-based ICs) that comprise such a MOS-FET. The MOS-FETs are planar devices, without etched recess or epitaxial re-growth, with gate oxide that is primarily Ga2O3, and with low midgap interface state density (e.g., at most 1x1011 cm-2 eV-1 at 20° C.). The method involves ion implantation, implant activation in an As-containing atmosphere, surface reconstruction, and in situ deposition of the gate oxide. In preferred embodiments, no processing step subsequent to gate oxide formation is carried out above 300° C. in air, or above about 700° C. in UHV. The method makes possible fabrication of planar enhancement-type MOS-FETs having excellent characteristics, and also makes possible fabrication of complementary MOS-FETs, as well as ICs comprising MOS-FETs and MES-FETs. The method includes deposition of gate oxide of overall composition GaxAyOz, where Ga substantially is in the 3+ oxidation state, A is one or more electropositive stabilizer element adapted for stabilizing Ga in the 3+ oxidation state, x is greater than or equal to zero, z is selected to satisfy the requirement that both Ga and A are substantially fully oxidized, and y/(x+y) is greater than 0.
其他摘要	公开了一种制造GaAs基增强型MOS-FET的方法，以及包括这种MOS-FET的制品（例如，基于GaAs的IC）。 MOS-FET是平面器件，没有蚀刻凹陷或外延再生长，栅极氧化物主要是Ga 2 O 3，并且具有低的中间隙界面态密度（例如，在20℃下最多1×10 11 cm -2 eV-1）。该方法涉及离子注入，在含As气氛中的注入活化，表面重建和栅氧化物的原位沉积。在优选的实施方案中，在高于300℃的空气中或高于约700℃的UHV中进行栅极氧化物形成之后的处理步骤。该方法使得可以制造具有优异特性的平面增强型MOS-FET，并且还可以制造互补MOS-FET，以及包括MOS-FET和MES-FET的IC。该方法包括沉积总组成为GaxAyOz的栅极氧化物，其中Ga基本上处于3+氧化态，A是一种或多种适用于稳定3+氧化态的Ga的正电性稳定剂元素，x大于或等于零选择z，以满足Ga和A基本上完全氧化的要求，并且y /（x + y）大于0.1。
授权日期	2001-08-07
申请日期	1998-07-24
专利号	US6271069
专利状态	失效
申请号	US09/122558
公开（公告）号	US6271069
IPC 分类号	C23C14/08 \| H01L29/51 \| H01L29/40 \| H01L33/00 \| H01S5/00 \| H01S5/028 \| H01L21/28 \| H01L21/283 \| H01L21/331 \| H01L21/336 \| H01L21/8238 \| H01L21/8252 \| H01L27/06 \| H01L27/092 \| H01L29/737 \| H01L29/78 \| H01L33/44 \| H01L29/76
专利代理人	-
代理机构	PACHER, EUGEN E.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/42295
专题	半导体激光器专利数据库
作者单位	AGERE SYSTEMS GUARDIAN CORP.
推荐引用方式 GB/T 7714	CHEN, YOUNG-KAI,CHO, ALFRED YI,HOBSON, WILLIAM SCOTT,et al. Method of making an article comprising an oxide layer on a GaAs-based semiconductor body. US6271069[P]. 2001-08-07.

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