Distributed feedback-channeled substrate planar semiconductor laser

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	Distributed feedback-channeled substrate planar semiconductor laser
其他题名	Distributed feedback-channeled substrate planar semiconductor laser
	VANGIESON, EDWARD A.; YORK, PAMELA K.; CONNOLLY, JOHN C.
	1994-03-15
专利权人	EASTSMAN KODAK COMPANY
公开日期	1994-03-15
授权国家	美国
专利类型	授权发明
摘要	A distributed feedback semiconductor diode laser includes a substrate of n-type gallium arsenide having a channel along one surface thereof. A first clad layer of n-type aluminum gallium arsenide is on the surface of the substrate. The first clad layer fills the channel and has a planar surface. An active layer of undoped aluminum gallium arsenide is on the first clad layer and a first spacer layer of p-type conductivity aluminum gallium arsenide is on the active layer. A grating layer of p-type conductivity aluminum gallium arsenide is on the first spacer layer and has a second order grating therein which extends across the channel in the substrate. A second spacer layer of p-type conductivity aluminum gallium arsenide is on the grating layer and a second clad layer of p-type conductivity aluminum gallium arsenide is on the second spacer layer. The content of aluminum in the second clad layer varies across its thickness from an amount less than that in the second spacer layer at its junction with the second spacer layer to an amount equal to that in the second spacer layer. A cap layer of n-type conductivity gallium arsenide is on the second clad layer and a p-type conductivity contact region extends through the cap layer to the second clad layer over the groove in the substrate. Conductive contacts are on the contact region and a second surface of the substrate. The composition and thicknesses of the active layer, spacer layers and grating layer are such as to provide the output beam of the diode laser with a relatively low divergence angle of about 27 degrees.
其他摘要	分布式反馈半导体二极管激光器包括n型砷化镓衬底，该衬底沿其一个表面具有沟道。 n型砷化铝镓的第一包层位于基板的表面上。第一包层填充通道并具有平坦表面。未掺杂的砷化铝镓的有源层位于第一覆层上，并且p型导电砷化铝镓的第一间隔层位于有源层上。 p型导电铝砷化镓的光栅层位于第一间隔层上并且在其中具有二阶光栅，该二阶光栅延伸穿过衬底中的沟道。 p型导电性砷化铝镓的第二间隔层位于光栅层上，第二覆层p型位于p型上导电性铝砷化镓位于第二间隔层上。第二包层中的铝含量在其厚度上变化，其量小于第二间隔层在与第二间隔层的接合处的量，其量等于第二间隔层中的量。在第二覆层上具有n型导电性砷化镓的覆盖层，并且p型导电性接触区域在衬底中的凹槽上方延伸穿过覆盖层到第二覆层。导电触点位于接触区域和基板的第二表面上。有源层，间隔层和光栅层的组成和厚度使得二极管激光器的输出光束具有约27的相对低的发散角。度。
授权日期	1994-03-15
申请日期	1992-12-11
专利号	US5295150
专利状态	失效
申请号	US07/989273
公开（公告）号	US5295150
IPC 分类号	H01S5/00 \| H01S5/12 \| H01S5/223 \| H01S3/08
专利代理人	-
代理机构	DUDLEY, MARK Z.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/42291
专题	半导体激光器专利数据库
作者单位	EASTSMAN KODAK COMPANY
推荐引用方式 GB/T 7714	VANGIESON, EDWARD A.,YORK, PAMELA K.,CONNOLLY, JOHN C.. Distributed feedback-channeled substrate planar semiconductor laser. US5295150[P]. 1994-03-15.

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