Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device

OPT OpenIR > 半导体激光器专利数据库

	Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device
其他题名	Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device
	HAYAKAWA, JUNICHIRO; MURAKAMI, AKEMI; KONDO, TAKASHI; TAKEDA, KAZUTAKA; JOGAN, NAOKI; SAKURAI, JUN
	2016-11-22
专利权人	FUJI XEROX CO., LTD.
公开日期	2016-11-22
授权国家	美国
专利类型	授权发明
摘要	Provided is a surface-emitting semiconductor laser including a substrate; a first semiconductor multilayer reflector of a first conductivity type formed on the substrate, the first semiconductor multilayer reflector including plural pairs of a low-refractive-index layer and a high-refractive-index layer; a cavity region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector of a second conductivity type formed on the cavity region, the second semiconductor multilayer reflector including plural pairs of a low-refractive-index layer and a high-refractive-index layer; a columnar structure extending from the second semiconductor multilayer reflector to the cavity region; and a current confinement layer formed inside the columnar structure by selective oxidation of a semiconductor layer containing Al. The cavity region includes an active region; and a cavity extension region interposed between the active region and the first semiconductor multilayer reflector.
其他摘要	提供一种包括基板的表面发射半导体激光器;形成在基板上的第一导电类型的第一半导体多层反射器，第一半导体多层反射器包括多对低折射率层和高折射率层;在第一半导体多层反射器上形成空腔区域;形成在腔区域上的第二导电类型的第二半导体多层反射器，第二半导体多层反射器包括多对低折射率层和高折射率层;从第二半导体多层反射器延伸到空腔区域的柱状结构;通过选择性氧化含Al的半导体层，在柱状结构内部形成电流限制层。腔区域包括有源区域;以及插入在有源区和第一半导体多层反射器之间的腔延伸区。
授权日期	2016-11-22
申请日期	2015-07-10
专利号	US9502863
专利状态	授权
申请号	US14/795987
公开（公告）号	US9502863
IPC 分类号	H04B10/00 \| H01S5/183 \| H01S5/00 \| H01S5/343 \| G03G15/04 \| H04B10/50
专利代理人	-
代理机构	SUGHRUE MION, PLLC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/42238
专题	半导体激光器专利数据库
作者单位	FUJI XEROX CO., LTD.
推荐引用方式 GB/T 7714	HAYAKAWA, JUNICHIRO,MURAKAMI, AKEMI,KONDO, TAKASHI,et al. Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device. US9502863[P]. 2016-11-22.

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