Xi'an Institute of Optics and Precision Mechanics,CAS
TEM mode quantum wire or well structure | |
其他题名 | TEM mode quantum wire or well structure |
DUTTA, MITRA; STROSCIO, MICHAEL A.; SIRENKO, YURI M.; KIM, KI WOOK | |
1997-08-26 | |
专利权人 | ARMY, UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE |
公开日期 | 1997-08-26 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | A semiconductor lasing device is formed by disposing a quantum well or quantum wire array between positive and negative ohmic contacts such that different potentials are applied along the array to establish a transverse electromagnetic (TEM) mode of the optic signal (i.e. where the field components lie in a plane perpendicular to the direction of propagation). Thus, the light confinement l will be on the order of the electron confinement a. By applying different potentials via the positive and negative ohmic contacts to multiply connected waveguides, the established TEM mode does not have a cut-off frequency, and therefore, the gain of device can be greatly enhanced while still providing increased anisotropy and a low threshold current. |
其他摘要 | 通过在正和负欧姆接触之间设置量子阱或量子线阵列来形成半导体激光器件,使得沿阵列施加不同的电势以建立光信号的横向电磁(TEM)模式(即,场分量所在的位置)在垂直于传播方向的平面内)。因此,光限制l将是电子限制a的量级。通过正和负欧姆接触将不同的电位施加到多个连接的波导,建立的TEM模式没有截止频率,因此,器件的增益可以大大增强,同时仍然提供增加的各向异性和低阈值电流。 |
授权日期 | 1997-08-26 |
申请日期 | 1996-04-16 |
专利号 | US5661740 |
专利状态 | 失效 |
申请号 | US08/636995 |
公开(公告)号 | US5661740 |
IPC 分类号 | H01S5/34 | H01S5/042 | H01S5/06 | H01S5/00 | H01S5/10 | H01S5/062 | H01S3/19 | H01L29/06 |
专利代理人 | - |
代理机构 | ZELENKA, MICHAEL ANDERSON, WILLIAM H. |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/42215 |
专题 | 半导体激光器专利数据库 |
作者单位 | ARMY, UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE |
推荐引用方式 GB/T 7714 | DUTTA, MITRA,STROSCIO, MICHAEL A.,SIRENKO, YURI M.,et al. TEM mode quantum wire or well structure. US5661740[P]. 1997-08-26. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US5661740.PDF(509KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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