Single longitudinal mode semiconductor laser

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	Single longitudinal mode semiconductor laser
其他题名	Single longitudinal mode semiconductor laser
	MITO IKUO
	1988-11-17
专利权人	NEC CORPORATION
公开日期	1988-11-17
授权国家	德国
专利类型	授权发明
摘要	The semiconductor laser diode comprises a distributed Bragg reflector formed on a substrate. The reflector includes an optical waveguide sandwiched between first and second cladding regions formed over the substrate. The optical waveguide has a corrugated region extending within the optical waveguide in a direction parallel to the surface of the substrate. The thickness of the corrugated region varies in a prescribed period and the refractive index of the corrugated region differs from that of the optical waveguide. An optically active layer formed over the substrate is butt-jointed to the optical waveguide, and emits light beams when a current is injected into it. This single longitudinal mode semiconductor laser has high performance features. Its equivalent reflecting power is increased by so structuring the grating section that it is highly efficient in coupling the periodic structure and light.
其他摘要	半导体激光二极管包括形成在衬底上的分布式布拉格反射器。反射器包括夹在第一和第二包层区域之间的光波导，第一和第二包层区域形成在基板上。光波导具有在平行于基板表面的方向上在光波导内延伸的波纹区域。波纹区域的厚度在规定的时间内变化，并且波纹区域的折射率不同于光波导的折射率。形成在基板上的光学有源层与光波导对接，并在向其注入电流时发射光束。这种单纵模半导体激光器具有高性能特征。通过如此构造光栅部分来增加其等效反射功率，使得它在耦合周期性结构和光方面非常有效。
授权日期	1988-11-17
申请日期	1984-05-08
专利号	DE3474616D1
专利状态	失效
申请号	DE3474616
公开（公告）号	DE3474616D1
IPC 分类号	H01S5/00 \| H01S5/125 \| H01S3/06 \| H01S3/19
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/42210
专题	半导体激光器专利数据库
作者单位	NEC CORPORATION
推荐引用方式 GB/T 7714	MITO IKUO. Single longitudinal mode semiconductor laser. DE3474616D1[P]. 1988-11-17.