Method and electrode arrangement for inducing flat frequency modulation response in semiconductor laser

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	Method and electrode arrangement for inducing flat frequency modulation response in semiconductor laser
其他题名	Method and electrode arrangement for inducing flat frequency modulation response in semiconductor laser
	EMURA, KATSUMI; MITO, IKUO; SUEMURA, YOSHIHIKO
	1994-06-28
专利权人	NEC CORPORATION
公开日期	1994-06-28
授权国家	美国
专利类型	授权发明
摘要	In order to induce a flat frequency modulation response in a multi-electrode semiconductor laser which includes an active region and at least one phase control region with no active layer, a modulation current is applied to both of the active region and the phase control region. Further, an improved electrode arrangement for inducing a flat frequency modulation response in a multi-electrode semiconductor laser is present. The semiconductor laser includes three regions: an active region, a phase control region and a Bragg reflector region. Each of the active region, the phase control region and the Bragg reflector region being provided with an electrode for receiving an injection current, wherein the electrode provided for the active layer extends into the phase control region.
其他摘要	为了在包括有源区和至少一个没有有源层的相位控制区的多电极半导体激光器中引起平坦的频率调制响应，将调制电流施加到有源区和相位控制区。此外，存在用于在多电极半导体激光器中引起平坦频率调制响应的改进的电极布置。半导体激光器包括三个区域：有源区，相位控制区和布拉格反射器区。每个有源区，相位控制区和布拉格反射器区设置有用于接收注入电流的电极，其中为有源层提供的电极延伸到相位控制区中。
授权日期	1994-06-28
申请日期	1991-09-30
专利号	US5325382
专利状态	失效
申请号	US07/767718
公开（公告）号	US5325382
IPC 分类号	H01S5/0625 \| H01S5/00 \| H01S3/10
专利代理人	-
代理机构	SUGHRUE,MION,ZINN,MACPEAK & SEAS
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/42034
专题	半导体激光器专利数据库
作者单位	NEC CORPORATION
推荐引用方式 GB/T 7714	EMURA, KATSUMI,MITO, IKUO,SUEMURA, YOSHIHIKO. Method and electrode arrangement for inducing flat frequency modulation response in semiconductor laser. US5325382[P]. 1994-06-28.

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