Semiconductor laser element having InGaAs compressive-strained quantum-well active layer

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor laser element having InGaAs compressive-strained quantum-well active layer
其他题名	Semiconductor laser element having InGaAs compressive-strained quantum-well active layer
	ASANO, HIDEKI
	2007-09-25
专利权人	NICHIA CORPORATION
公开日期	2007-09-25
授权国家	美国
专利类型	授权发明
摘要	In a semiconductor laser element, a lower cladding layer, a lower optical waveguide layer, an InGaAs compressive-strain quantum-well active layer, an upper optical waveguide layer, and an upper cladding layer are formed in this order in a stripe-shaped region on a substrate. A current-blocking layer is formed on both sides of the compressive-strain quantum-well active layer so that the compressive-strain quantum-well active layer is sandwiched between two portions of the current-blocking layer, and trenches extending along the direction of the laser resonator are formed through the current-blocking layer. Instead of providing the trenches, the widths of the layers formed above the substrate are reduced so as to form a ridge structure.
其他摘要	在半导体激光元件中，下部包层，下部光波导层，InGaAs压缩应变量子阱有源层，上部光波导层和上部包层依次形成为条形区域在基板上。在压缩应变量子阱有源层的两侧形成电流阻挡层，使得压缩应变量子阱有源层夹在电流阻挡层的两个部分之间，并且沟槽沿着方向延伸。激光谐振器通过电流阻挡层形成。代替提供沟槽，减小了在衬底上方形成的层的宽度，以便形成脊结构。
授权日期	2007-09-25
申请日期	2005-03-11
专利号	US7274720
专利状态	失效
申请号	US11/077126
公开（公告）号	US7274720
IPC 分类号	H01S5/00 \| H01S5/227 \| H01S5/10 \| H01S5/20 \| H01S5/22 \| H01S5/32 \| H01S5/34 \| H01S5/343
专利代理人	-
代理机构	SUGHRUE MION,PLLC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/42025
专题	半导体激光器专利数据库
作者单位	NICHIA CORPORATION
推荐引用方式 GB/T 7714	ASANO, HIDEKI. Semiconductor laser element having InGaAs compressive-strained quantum-well active layer. US7274720[P]. 2007-09-25.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
US7274720.PDF（826KB）	专利		开放获取	CC BY-NC-SA	请求全文