Method of fabricating semiconductor laser using selective growth

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	Method of fabricating semiconductor laser using selective growth
其他题名	Method of fabricating semiconductor laser using selective growth
	FUJIMOTO, TSUYOSHI; NAITO, YUMI; OKUBO, ATSUSHI; YAMADA, YOSHIKAZU
	2001-01-09
专利权人	MITSUI CHEMICALS INC.
公开日期	2001-01-09
授权国家	美国
专利类型	授权发明
摘要	In a self-aligned structure semiconductor laser in which a pair of optical guide layers are respectively formed on both faces of an active layer, the optical guide layers having a bandgap which is wider than that of the active layer, a pair of cladding layers are formed so as to sandwich the active layer and the optical guide layers, the cladding layers having a bandgap which is wider than bandgap of the optical guide layers, a pair of carrier blocking layers are respectively formed between the active layer and the optical guide layers, the carrier blocking layers having a bandgap which is wider than bandgaps of the active layer and the optical guide layers, and a current blocking layer having a stripe-like window is embedded in at least one of the optical guide layers, the current blocking layer is formed by selective growth.In this way, a window of a current blocking layer can be accurately formed and the fabrication yield can be improved while avoiding maleffects on other layers.
其他摘要	在自对准结构半导体激光器中，其中一对光导层分别形成在有源层的两个面上，具有比有源层宽的带隙的光导层，一对包层是为了将有源层和光导层夹在中间，包层具有比光导层的带隙宽的带隙，在有源层和光导层之间分别形成一对载流子阻挡层，载流子阻挡层具有比有源层和光导层的带隙宽的带隙，并且具有条状窗口的电流阻挡层嵌入至少一个光导层中，电流阻挡层是通过这种方式，可以精确地形成电流阻挡层的窗口，并且可以提高制造产量，同时避免对其他层的影响。
授权日期	2001-01-09
申请日期	1998-09-18
专利号	US6171878
专利状态	失效
申请号	US09/157246
公开（公告）号	US6171878
IPC 分类号	H01L33/00 \| H01S5/223 \| H01S5/00 \| H01S5/343 \| H01S5/20 \| H01S5/22 \| H01S3/02
专利代理人	-
代理机构	BIRCH,STEWART,KOLASCH,BIRCH,LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/41795
专题	半导体激光器专利数据库
作者单位	MITSUI CHEMICALS INC.
推荐引用方式 GB/T 7714	FUJIMOTO, TSUYOSHI,NAITO, YUMI,OKUBO, ATSUSHI,et al. Method of fabricating semiconductor laser using selective growth. US6171878[P]. 2001-01-09.

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