Semiconductor light-emitting device capable of having good stability in fundamental mode of oscillation, decreasing current leakage, and lowering oscillation threshold limit, and method of making the same

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	Semiconductor light-emitting device capable of having good stability in fundamental mode of oscillation, decreasing current leakage, and lowering oscillation threshold limit, and method of making the same
其他题名	Semiconductor light-emitting device capable of having good stability in fundamental mode of oscillation, decreasing current leakage, and lowering oscillation threshold limit, and method of making the same
	SASAKI, KAZUAKI; YAMAMOTO, OSAMU
	1996-05-14
专利权人	SHARP KABUSHIKI KAISHA
公开日期	1996-05-14
授权国家	美国
专利类型	授权发明
摘要	A semiconductor laser device includes a substrate having one of p- and n-conductivity types, and a current constrictive layer formed on a surface of the substrate and having the other type of conductivity. The current constrictive layer has a through-channel extending to the surface of the substrate for defining a current path in a direction perpendicular to the surface of the substrate. The through-channel is of a belt-like pattern extending in a direction perpendicular to end surfaces of the substrate. A third cladding layer having the one type of conductivity is filled in the through-channel, a surface of the third cladding layer being flush with a surface of a current constrictive layer. A first cladding layer, an active layer, and a second cladding layer which constitute a double heterostructure are formed over the third cladding layer and current constrictive layer.
其他摘要	一种半导体激光器件，包括具有p型和n型导电类型之一的基板，以及形成在基板表面上并具有另一种导电性的电流限制层。电流限制层具有延伸到衬底表面的贯通沟道，用于在垂直于衬底表面的方向上限定电流路径。贯通通道是沿垂直于基板端面的方向延伸的带状图案。具有一种导电性的第三包层填充在通道中，第三包层的表面与电流限制层的表面齐平。在第三包层和电流限制层上形成构成双异质结构的第一包层，有源层和第二包层。
授权日期	1996-05-14
申请日期	1995-05-05
专利号	US5516723
专利状态	失效
申请号	US08/435391
公开（公告）号	US5516723
IPC 分类号	H01L33/00 \| H01S5/223 \| H01S5/00 \| H01S5/40 \| H01S5/32 \| H01S5/323 \| H01S5/183 \| H01S5/22 \| H01L33/14 \| H01L21/20
专利代理人	-
代理机构	MORRISON & FOERSTER
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/41772
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	SASAKI, KAZUAKI,YAMAMOTO, OSAMU. Semiconductor light-emitting device capable of having good stability in fundamental mode of oscillation, decreasing current leakage, and lowering oscillation threshold limit, and method of making the same. US5516723[P]. 1996-05-14.

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