Semiconductor guided-wave optical device and method of fabricating thereof

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	Semiconductor guided-wave optical device and method of fabricating thereof
其他题名	Semiconductor guided-wave optical device and method of fabricating thereof
	AOKI, MASAHIRO; SATO, HIROSHI; SUZUKI, MAKOTO; KOMORI, MASAAKI
	1998-06-09
专利权人	OCLARO JAPAN, INC.
公开日期	1998-06-09
授权国家	美国
专利类型	授权发明
摘要	After a shadow mask that is separate from a semiconductor substrate is used and is arranged over the semiconductor substrate via a wafer holder installed in a reaction chamber of a vapor-phase epitaxial system so that a predetermined space d can be secured, a semiconductor thin film crystal including a core layer and a cladding layer is grown by organometallic vapor-phase epitaxy. A core layer wherein the thickness of a grown film in an area which is opposite to a masking part of the shadow mask on the semiconductor substrate is reduced in the tapered shape can be readily obtained by introducing this process for growth in a normal process for fabricating a semiconductor guided-wave optical device. A semiconductor guided-wave optical device and a method of fabricating thereof wherein the thickness of a film which is to be a waveguide is tapered and the width of the waveguide is tapered without deteriorating crystallinity by a new crystal growing method using this shadow mask are obtained. It is desirable that the surface of the shadow mask be coated with a dielectric cap layer. Hereby, a beam expander-integrated laser diode which can be fabricated by an extremely simple method and enables extremely efficient optical coupling with a fiber can be realized.
其他摘要	在使用与半导体衬底分离的荫罩之后，通过安装在气相外延系统的反应室中的晶片支架将半导体衬底布置在半导体衬底上，从而可以确保预定的空间d，半导体薄膜通过有机金属气相外延生长包括芯层和包层的晶体。通过在正常的制造工艺中引入该生长工艺，可以容易地获得芯层，其中在与半导体衬底上的荫罩的掩模部分相对的区域中的生长膜的厚度减小为锥形形状。半导体导波光学器件。一种半导体导波光学器件及其制造方法，其中，通过使用该荫罩的新晶体生长方法，将成为波导的膜的厚度逐渐变细并且波导的宽度逐渐变细而不会使结晶度劣化。希望荫罩的表面涂有介电保护层。由此，可以实现扩束器集成的激光二极管，该激光二极管可以通过极其简单的方法制造并且能够实现与光纤的极其有效的光学耦合。
授权日期	1998-06-09
申请日期	1996-03-21
专利号	US5764842
专利状态	失效
申请号	US08/619184
公开（公告）号	US5764842
IPC 分类号	G02B6/13 \| H01S5/026 \| H01S5/00 \| H01S5/10 \| H01S5/22 \| G02B6/12 \| H01S5/50 \| H01S3/00 \| H01S5/343 \| H01S5/223 \| H01S5/227 \| G02B6/10
专利代理人	-
代理机构	FAY,SHARPE,BEALL,FAGAN,MINNICH & MCKEE
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/41653
专题	半导体激光器专利数据库
作者单位	OCLARO JAPAN, INC.
推荐引用方式 GB/T 7714	AOKI, MASAHIRO,SATO, HIROSHI,SUZUKI, MAKOTO,et al. Semiconductor guided-wave optical device and method of fabricating thereof. US5764842[P]. 1998-06-09.

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