Vertical cavity surface emitting laser with buried dielectric distributed Bragg reflector

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	Vertical cavity surface emitting laser with buried dielectric distributed Bragg reflector
其他题名	Vertical cavity surface emitting laser with buried dielectric distributed Bragg reflector
	ZHU, ZUHUA
	2005-04-12
专利权人	GAZILLION BITS, INC.
公开日期	2005-04-12
授权国家	美国
专利类型	授权发明
摘要	A vertical cavity surface-emitting laser (VCSEL) structure and related fabrication methods are described, the VCSEL comprising amorphous dielectric distributed Bragg reflectors (DBRs) while also being capable of fabrication in a single-growth process. Beginning with a substrate such as InP, a first amorphous dielectric DBR structure is deposited thereon, but is limited in width such that some substrate material remains uncovered by the dielectric material. A lateral overgrowth layer is then formed by epitaxially growing material such as InP onto the substrate, the lateral overgrowth layer eventually burying the dielectric DBR structure as well as the previously-uncovered substrate material. Active layers may then be epitaxially grown on the lateral overgrowth layer, and a top dielectric DBR may be deposited thereon using conventional techniques. To save vertical space between DBRs, the first DBR may be deposited in a non-reentrant well formed in the surface of a substrate. A dual lateral overgrowth method for further reducing dislocations above a lower buried dielectric DBR of a VCSEL is also described.
其他摘要	描述了垂直腔表面发射激光器（VCSEL）结构和相关的制造方法，VCSEL包括非晶电介质分布式布拉格反射器（DBR），同时还能够在单生长过程中制造。从诸如InP的衬底开始，在其上沉积第一非晶电介质DBR结构，但宽度受限，使得一些衬底材料保持未被电介质材料覆盖。然后通过将诸如InP的外延生长材料形成到衬底上来形成横向过生长层，横向过生长层最终掩埋介电DBR结构以及先前未覆盖的衬底材料。然后可以在横向过生长层上外延生长有源层，并且可以使用常规技术在其上沉积顶部电介质DBR。为了节省DBR之间的垂直空间，第一DBR可以沉积在基板表面中形成的非重入阱中。还描述了用于进一步减少VCSEL的下掩埋电介质DBR上方的位错的双侧向过生长方法。
授权日期	2005-04-12
申请日期	2002-03-26
专利号	US6878958
专利状态	失效
申请号	US10/106929
公开（公告）号	US6878958
IPC 分类号	H04B10/155 \| H04B10/152 \| H01S5/183 \| H01S5/00 \| H04J14/02 \| H01L33/00 \| H01S5/20 \| H01L29/06 \| H01L31/072 \| H01L31/109 \| H01L31/0328 \| H01L31/0336
专利代理人	-
代理机构	COOPER & DUNHAM LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/41339
专题	半导体激光器专利数据库
作者单位	GAZILLION BITS, INC.
推荐引用方式 GB/T 7714	ZHU, ZUHUA. Vertical cavity surface emitting laser with buried dielectric distributed Bragg reflector. US6878958[P]. 2005-04-12.

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