Xi'an Institute of Optics and Precision Mechanics,CAS
Defect capping method for reduced defect density epitaxial articles | |
其他题名 | Defect capping method for reduced defect density epitaxial articles |
SINGH, RAJIV K.; ARJUNAN, ARUL CHAKKARAVARTHI | |
2015-12-22 | |
专利权人 | SINMAT, INC. |
公开日期 | 2015-12-22 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | A method for forming an epitaxial layer on a substrate surface having crystalline defect or amorphous regions and crystalline non-defect regions includes preferential polishing or etching the crystalline defect or amorphous regions relative to the crystalline non-defect regions to form a decorated substrate surface having surface recess regions. A capping layer is deposited on the decorated substrate surface to cover the crystalline non-defect regions and to at least partially fill the surface recess regions. The capping layer is patterned by removing the capping layer over the crystalline non-defect regions to form exposed non-defect regions while retaining the capping layer in at least a portion of the surface recess regions. Selective epitaxy is then used to form the epitaxial layer, wherein the capping layer in the surface recess regions restricts epitaxial growth of the epitaxial layer over the surface recess regions. |
其他摘要 | 在具有晶体缺陷或非晶区域和晶体非缺陷区域的衬底表面上形成外延层的方法包括相对于晶体非缺陷区域优先抛光或蚀刻晶体缺陷或非晶区域以形成具有表面的装饰衬底表面休区。覆盖层沉积在装饰的基板表面上以覆盖结晶的非缺陷区域并至少部分地填充表面凹陷区域。通过去除结晶非缺陷区域上方的覆盖层来图案化覆盖层,以形成暴露的非缺陷区域,同时将覆盖层保持在表面凹陷区域的至少一部分中。然后使用选择性外延来形成外延层,其中表面凹陷区域中的覆盖层限制外延层在表面凹陷区域上的外延生长。 |
授权日期 | 2015-12-22 |
申请日期 | 2013-04-29 |
专利号 | US9218954 |
专利状态 | 授权 |
申请号 | US13/872821 |
公开(公告)号 | US9218954 |
IPC 分类号 | H01L21/00 | H01L21/02 | H01L21/306 | C30B25/18 | C30B29/36 | H01L29/16 | H01L29/20 |
专利代理人 | - |
代理机构 | JETTER & ASSOCIATES, P.A. |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/38620 |
专题 | 半导体激光器专利数据库 |
作者单位 | SINMAT, INC. |
推荐引用方式 GB/T 7714 | SINGH, RAJIV K.,ARJUNAN, ARUL CHAKKARAVARTHI. Defect capping method for reduced defect density epitaxial articles. US9218954[P]. 2015-12-22. |
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US9218954.PDF(1045KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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