Semiconductor composite device, method for manufacturing the semiconductor composite device, LED head that employs the semiconductor composite device, and image forming apparatus that employs the LED head

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	Semiconductor composite device, method for manufacturing the semiconductor composite device, LED head that employs the semiconductor composite device, and image forming apparatus that employs the LED head
其他题名	Semiconductor composite device, method for manufacturing the semiconductor composite device, LED head that employs the semiconductor composite device, and image forming apparatus that employs the LED head
	OGIHARA, MITSUHIKO
	2010-10-12
专利权人	OKI DATA CORPORATION
公开日期	2010-10-12
授权国家	美国
专利类型	授权发明
摘要	A semiconductor composite apparatus includes a semiconductor thin film and a metal layer formed on a substrate. The semiconductor thin film is bonded to the metal layer formed on the substrate. A region is formed between the semiconductor thin film and the metal surface, and contains an oxide of a metal that forms the metal surface. The metal surface is a surface of a metal layer provided on the substrate. The metal surface contains an element selected from the group consisting of Pd, Ni, Ge, Pt, Ti, Cr, and Au. The metal surface is coated with either a Pd layer or an Ni layer.
其他摘要	一种半导体复合装置，包括半导体薄膜和形成在基板上的金属层。半导体薄膜与形成在基板上的金属层结合。在半导体薄膜和金属表面之间形成区域，并且包含形成金属表面的金属的氧化物。金属表面是设置在基板上的金属层的表面。金属表面含有选自Pd，Ni，Ge，Pt，Ti，Cr和Au的元素。金属表面涂有Pd层或Ni层。
授权日期	2010-10-12
申请日期	2008-08-29
专利号	US7811841
专利状态	授权
申请号	US12/230518
公开（公告）号	US7811841
IPC 分类号	H01L21/00 \| H01L33/08 \| H01L33/30 \| H01L33/36 \| H01L33/58 \| H01L33/62
专利代理人	-
代理机构	RABIN & BERDO,PC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/38475
专题	半导体激光器专利数据库
作者单位	OKI DATA CORPORATION
推荐引用方式 GB/T 7714	OGIHARA, MITSUHIKO. Semiconductor composite device, method for manufacturing the semiconductor composite device, LED head that employs the semiconductor composite device, and image forming apparatus that employs the LED head. US7811841[P]. 2010-10-12.